Innovation & Tech Development Engineer

KRISV Consulting; Penang; On-site; MYR 80,000 - 100,000; Full time

Job summary

A semiconductor R&D company in Penang, Malaysia, seeks an experienced Engineer to lead development, testing, and validation of next-generation GaN power technologies. You will drive technology projects, conduct failures analyses, and collaborate on innovation initiatives. The ideal candidate has a master's degree in Electrical Engineering or Physics, over five years of experience in semiconductor environments, and great project leadership skills. Proficiency in structured problem-solving and excellent English communication is required. German language skills are an advantage.

Qualifications

• Master's degree or higher in Electrical Engineering, Physics, or related field.
• 5+ years in semiconductor testing, process development, or integration.
• Familiarity with fab systems and production processes (Si, SiC, GaN).
• Strong experience in project leadership and cross-functional teamwork.
• Hands-on with GaN HEMT technology is a plus.
• Proficient in high-volume manufacturing, reliability, and quality analysis.
• Skilled in structured problem-solving (e.g., 8D, Six Sigma).
• Excellent English communication; German is an advantage.

Responsibilities

• Drive GaN power technology development projects.
• Design and develop test structures for process control.
• Perform electrical characterization of devices.
• Conduct physical/electrical failure analyses.
• Plan and assess design of experiments.
• Participate in root cause analysis using 8D/Six Sigma methods.
• Collaborate on technology roadmap and innovation initiatives.
• Generate Intellectual Property based on R&D outcomes.

Skills

Semiconductor testing

Process development

Project leadership

Cross-functional teamwork

High-volume manufacturing

Reliability analysis

Structured problem-solving

Communication in English

German language

Education

Master's degree in Electrical Engineering

Master's degree in Physics

Job description

Overview

Seeking an Engineer to lead development, testing, and validation activities for next-generation GaN power technologies, including design of experiments, failure analysis, and IP generation within a semiconductor R&D environment.

Responsibilities

• Drive GaN power technology development projects and work packages.
• Design and develop test structures for process control and evaluation.
• Perform electrical characterization of devices and screening.
• Conduct and coordinate physical/electrical failure analyses.
• Plan and assess design of experiments and process variation experiments.
• Participate in root cause analysis using 8D/Six Sigma methods.
• Collaborate on technology roadmap and innovation initiatives.
• Generate Intellectual Property based on R&D outcomes.

Required Skills

• Master's degree or higher in Electrical Engineering, Physics, or related field.
• 5+ years in semiconductor testing, process development, or integration.
• Familiarity with fab systems and production processes (Si, SiC, GaN).
• Strong experience in project leadership and cross-functional teamwork.
• Hands-on with GaN HEMT technology is a strong plus.
• Proficient in high-volume manufacturing, reliability, and quality analysis.
• Skilled in structured problem-solving (e.g., 8D, Six Sigma).
• Excellent English communication; German language is an added advantage.