GaN Power Devices: Degradation & Reliability Postdoc

CNRS; France; Sur place; EUR 40 000 - 60 000; Plein temps

Résumé du poste

A research institution in France is seeking a postdoctoral researcher to investigate the reliability mechanisms of GaN chips. The candidate will be responsible for analyzing failures in power components using advanced physical techniques. This position offers a full-time temporary contract with a starting date in March 2026, working within a dedicated research team focused on cutting-edge technologies crucial for industries such as automotive and aerospace.

Responsabilités

• Conduct physical analysis of degradations in power components.
• Use tools available at the laboratory for research.
• Understand failure mechanisms involved in GaN power components.

Connaissances

Knowledge of microelectronics technologies

Experience in clean room environments

Experience using electron microscopy

Experience with FIB (Focused Ion Beam)

Experience in TCAD (Technology Computer Aided Design)

Experience in power electronics

Description du poste

A research institution in France is seeking a postdoctoral researcher to investigate the reliability mechanisms of GaN chips. The candidate will be responsible for analyzing failures in power components using advanced physical techniques. This position offers a full-time temporary contract with a starting date in March 2026, working within a dedicated research team focused on cutting-edge technologies crucial for industries such as automotive and aerospace.