Senior Engineer, Process Development, Cell Film

MICRON SEMICONDUCTOR ASIA OPERATIONS PTE. LTD.; Singapore; On-site; SGD 80,000 - 120,000; Full time

Job summary

A leading semiconductor company in Singapore is looking for a Senior Cell Film Process Development Engineer. The role involves developing advanced processes for NAND technology and requires a PhD with significant experience in thin film processing. Successful candidates will collaborate across teams to innovate and optimize production processes while addressing challenges in cell performance and reliability.

Qualifications

• PhD or equivalent in relevant fields.
• 2+ years of experience in thin films research in NAND.
• Strong skills in development and integration interaction.

Responsibilities

• Collaborate with teams to achieve timely task completion.
• Plan and implement experiments, writing concise reports.
• Develop new chemistries and hardware for process innovation.
• Define processing strategies for next-generation NAND.

Skills

Thin film processing (ALD, CVD)

Chemical kinetics

Electronic material properties

Characterization of Cell materials

Device physics knowledge

Education

PhD in Materials Science or related field

Tools

Fab metrology tools

Job description

Micron Technology, Inc.

As a Senior Cell Film Process Development Engineer at Micron Technology, Inc., you will play a pivotal role in our process technology team, driving the development of deep sub‑micron generation production‑worthy and cost‑effective processes. You will take ownership of both process development and related tool issues for specific films/processes, integrating these processes into corresponding process flows for application in high‑density advanced memory parts, primarily Advanced NAND applications.

Responsibilities

• Collaborate with diverse teams across R&D, integration, pilot line, and high-volume production to achieve timely task completion.
• Plan and implement experiments, and write concise reports detailing the results.
• Suggest processalternatives and evaluate options to improve film properties and process margins.
• Develop new chemistries and hardware for process innovation.
• Define process and equipment strategies for next-generation NAND.
• Design executeexperiments to improve NAND Cell performance.
• Identify and understand failure mechanisms of Cell materials and correlate them with NAND Cell electrical behaviors.
• Deliver innovative solutions for next-generation Advanced NAND Cell technology.
• Drive collaboration with integration, device, and manufacturing teams to address NAND Cell technology gaps.
• Solve complex problemsrelated to process and material development.
• Lead cost-saving initiatives through efficient process and material utilization.
• Correlate process parameters with device cell metrics to optimize performance.

Required Expertise

• Thin film processing (ALD, CVD) and characterization methods.
• Chemical kinetics, thermal dynamics, plasma physics and chemistry, vacuum physics, and their direct application to thin film deposition processes.
• Electronic material properties resulting from various types of deposited thin films.
• Fundamental characterization of Cell materials and development of new methodologies to project NAND Cell reliability.
• Interactions between process/hardware and device performance.
• Various thin film electrical evaluation methods and techniques such as leakage, impedance, capacitance.
• Experience and knowledge of Fab metrology tools such as optical/electrical methods.
• Knowledge of device physics, including basic MOCAP, MOSFET, and 3D NAND operation.
• Poly-silicon process and hardware development, with emphasis on Si precursor chemistry, grain growth, and crystallization mechanisms.
• Metal-induced crystallization, including deep expertise in Ni CVD processand Ni residue gettering techniques.
• Thin film transistor (TFT) experimentation and device characterization, including electrical performance evaluation and reliability testing.
• 3D NAND cell film formation, with strong understanding of upstream and downstream process integration.

Minimum Qualifications

• PhD or equivalent experience in Materials Science and Engineering, Chemical Engineering, Physics, Chemistry, Electrical Engineering, or a related field.
• At least 2 years of demonstrated experience in thin films research and development within the major NAND company, preferably with experience in deposition for microelectronic devices.
• Strong interpretation skills for development balanced with integration interaction.