Research Scientist (RF/mmWave GaN device design and process integration) (NSTIC), IME

A*STAR RESEARCH ENTITIES; Singapore; On-site; SGD 80,000 - 100,000; Full time

Job summary

A leading research organization in Singapore seeks a candidate for designing RF GaN devices using theory and practical simulations. The successful applicant will have a PhD in Semiconductor Physics or similar, strong hands-on experience in cleanroom environments, and proficiency in semiconductor device simulators, along with good programming skills. This role is fundamental for the advancement of semiconductor technologies and requires excellent communication skills and problem-solving abilities.

Qualifications

• PhD in a relevant field.
• Proficient in semiconductor device simulator.
• Knowledge of RF compound semiconductor device principles.
• Hands-on experience in cleanroom environments.
• Experience with programming languages.

Responsibilities

• Design RF GaN devices using theory and practical simulations.
• Realize devices with high uniformity in cleanroom.
• Analyze device characterization data to improve performance.

Skills

Proficiency in semiconductor device simulator

Knowledge of RF compound semiconductor devices

Hands-on experience in device fabrication

Programming languages (Python/C++/Matlab)

Team spirit

Problem solving

Communication skills

Education

PhD in Semiconductor Physics, Electrical Engineering or related areas

Tools

Silvaco

Python

C++

Matlab

Job description

The National Semiconductor Translation and Innovation Centre (NSTIC)(GaN) seeks a candidate who be able to design RF GaN device based on theory and practical device simulations, as well as realize the actual device with good repeatability and uniformity in the professional cleanroom. Successful candidate should have depth knowledge on RF compound semiconductor device operation principle, proficient at semiconductor device simulator, good hands‑on experience in device fabrication and process integrations, as well as systematic approaches/strategies to analyse the device characterization data to improve the performances.

Job Requirements

• PhD in Semiconductor Physics, Electrical Engineering or related areas.
• Proficiency in semiconductor device simulator. (e.g., Silvaco)
• Depth knowledge/theory on RF compound semiconductor device (GaN, GaAs) operating principle, material selection and structure design.
• Good hands‑on experience in professional cleanroom for RF compound semiconductor fabrications, process integration.
• Good experience in at least one programming language. (Python/C++/Matlab)
• Experience with high power RF/mmWave GaN device characterization and modeling.
• Team spirit and problem solving ability.
• Excellent verbal and written communication skills.
• Good track of scientific publications in International journals and Peer-review conference.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.