Thesis offer: New power GaN device sustaining voltages above 1200 V (M/F)

CNRS; France; Sur place; EUR 30 000 - 40 000; Plein temps

Résumé du poste

A leading research organization in France is seeking a First Stage Researcher to work on a thesis project focused on developing GaN HEMT transistors. The candidate will collaborate between the CNRS laboratories in Toulouse and Sherbrooke, requiring expertise in experimental semiconductor physics. Responsibilities include designing, manufacturing, and characterizing these devices. The position is full-time, starting in February 2026, with travel expenses covered between sites.

Prestations

Travel expenses covered between laboratories

Joint supervision program

Opportunities for innovative research

Qualifications

• Must have a strong background in experimental research and semiconductor physics.
• Highly motivated and autonomous with good teamwork skills.
• Experience with nitride materials and GaN technology is beneficial.

Responsabilités

• Design and manufacture GaN HEMT transistors for high voltage applications.
• Work collaboratively between Toulouse and Sherbrooke laboratories.
• Characterize semiconductors and contribute to innovative device development.

Connaissances

Experimental research

Component and semiconductor physics

Team collaboration

Formation

Master's degree or equivalent in physics, engineering, or related fields

Description du poste

Organisation/Company CNRS Department Laboratoire d'analyse et d'architecture des systèmes Research Field Engineering Physics Technology Researcher Profile First Stage Researcher (R1) Country France Application Deadline 18 Dec 2025 - 23:59 (UTC) Type of Contract Temporary Job Status Full-time Hours Per Week 35 Offer Starting Date 1 Feb 2026 Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No

Offer Description

This thesis is a joint supervision program between the University of Toulouse (France) under the supervision of Prof. Frédéric Morancho and the University of Sherbrooke (Canada) under the supervision of Prof. Hassan Maher. The research work planned as part of this thesis will take place at the CNRS, LAAS, and LN2 laboratories. The candidate will be required to work alternately at both sites. Travel expenses between the two laboratories will be covered by the project.

Nitride materials (III-N), which include GaN, are now the second most widely used family of semiconductors after silicon. These wide bandgap semiconductors are now used in various types of devices for lighting and displays (LEDs), data storage (laser diodes), microwave applications (RF HEMT transistors), and new devices (transistors, diodes) are being developed to convert electrical energy. To reduce the manufacturing costs of these devices, it is essential to be able to integrate these materials into silicon microelectronics processes in order to benefit from their advantages, particularly the availability of manufacturing tools capable of processing large substrates. However, the synthesis of GaN material by heteroepitaxy on silicon substrates faces many difficulties that severely limit the degrees of freedom in the design of material stacks for component fabrication and, consequently, the quality of the materials and the performance of the devices.
In this context, our goal is to design, manufacture, and characterize normally-off GaN HEMT transistors operating at voltages above 1200 V. The recruited candidate will be responsible for developing this innovative device, drawing on the expertise and know-how available at the LN2 and LAAS laboratories. He/she must be highly motivated by experimental research and have a good grounding in component and semiconductor physics. He/she must be autonomous, have a flair for experimentation and be a good team player.