GaN Epitaxy Characterisation and Device Engineer

IGSS GAN PTE. LTD.; Singapore; On-site; SGD 80,000 - 100,000; Full time

Job summary

A semiconductor research company in Singapore is seeking an experienced GaN Epitaxy Characterization and Device Engineer/Scientist. The selected candidate will perform advanced materials characterization and integrate with device teams to optimize GaN-on-Silicon wafer production. Key qualifications include a Master's or PhD in a related field, hands-on experience with MOCVD platforms, and strong skills in GaN material characterization techniques. Join us to enable the advancement of high-voltage GaN power devices and high-performance RFHEMTs.

Qualifications

• Master’s or PhD in a related field with a strong specialization in III-nitride semiconductors.
• Hands-on experience with GaN-on-Si epitaxial wafers grown by MOCVD.
• Experience correlating epi parameters with device performance.

Responsibilities

• Perform comprehensive characterization of GaN-on-Si wafers.
• Support optimization of MOCVD growth processes.
• Develop and maintain standard characterization methodologies.

Skills

GaN material characterization techniques

Analysis of process parameters

Electrical characterization

Optical inspection

Education

Master’s or PhD in Materials Science, Electrical Engineering, or Physics

Tools

Veeco MOCVD platforms

Aixtron MOCVD platforms

Job description

Job Summary

We are seeking an experienced GaN EpitaxyCharacterization and Device Engineer/Scientist to support the development, optimization, and production ramp of GaN-on-Silicon epitaxial wafers for Power and RF devices, grown using Veeco and Aixtron MOCVD platforms.

This role focuses on advanced materials characterization, feedback-driven epitaxial optimization, and tight integration with device and process teams to enable high-voltage GaN power devices and high-performance RFHEMTs.

Key Responsibilities

1. GaN Epitaxial Characterization (Power & RF Focus)

• Perform comprehensive structural, optical, electrical, and surface characterization of GaN-on-Si epitaxial wafers for:

1. Power GaN devices (650 V–1200 V)
2. RF GaN HEMTs (high mobility, low trapping)

• Evaluate material quality, uniformity, defect density, strain, wafer bow, and cracking

• Establish epi-to-device performance correlations for both power and RF applications

2. GaN-on-Si MOCVD Growth Support

• Provide characterization-driven feedback to epitaxy teams operating:

1. Veeco MOCVD systems (e.g., Propel)
2. Aixtron MOCVD systems (e.g., G5+, G10)

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Support optimization of:

1. AlN nucleation layers
2. Graded AlGaN and Superlattice buffer stacks
3. Carbon-doped and Fe-doped buffers
4. Thick GaN layers for high breakdown voltage

• Monitor and improve wafer-to-wafer and run-to-run uniformity, yield, and reproducibility

3. Advanced Characterization Techniques

Structural & Morphological

• HRXRD (rocking curves, RSM, tilt/twist, strain relaxation)
• AFM (RMS roughness, step-flow growth, pit density)
• SEM / TEM (threading dislocations, interfaces, buffer quality)
• Optical inspection (cracks, slip lines, wafer bow/warp)

Optical

• Photoluminescence (PL mapping, low-temperature PL)
• Cathodoluminescence (CL) for defect and recombination analysis

Electrical

• Hall effect (carrier concentration, mobility, sheet resistance)
• CV profiling (buffer and channel analysis)
• Contactless resistivity and mapping
• TLM / Van der Pauw support (as needed)

Composition & Impurities

• SIMS (C, Fe, Si, O, Mg profiling)
• XPS / AES (surface chemistry, contamination analysis)
• XSEM/TEM to study microstructure and crystal structure

4. Power GaN Device Integration Support

• Support epi development for:

1. High-voltage buffers and field management
2. Low buffer leakage and high breakdown strength
3. Dynamic RON and trapping reduction

• Correlate buffer design, carbon doping, and dislocation density with:

1. Breakdown voltage
2. Leakage current
3. Reliability and lifetime testing results
4. Dynamic RDSON

• Assist in root-cause analysis of power device yield and reliability issues

5. RF GaN Device Integration Support

• Support epi requirements for:

1. High-mobility 2DEG channels
2. Low RF dispersion and current collapse
3. Optimized AlGaN barrier thickness and composition

• Correlate interface quality, roughness, and impurity levels with:

1. Electron mobility and sheet density
2. RF performance (fT, fmax)
3. Trapping and pulsed-IV behavior

• Interface with RF device and reliability teams to address performance degradation mechanisms

6. Data Analysis, Process Control & Reporting

• Develop and maintain standard characterization methodologies and KPIs
• Apply statistical process control (SPC) to epi parameters and metrics
• Generate detailed technical reports and present findings to cross-functional teams
• Support continuous improvement and technology transfer to manufacturing

Required Qualifications

Education

• Master’s or PhD in Materials Science, Electrical Engineering, Physics, or related field
• Strong specialization in III-nitride semiconductors (GaN, AlGaN, AlN)

Technical Experience

• Hands‑on experience with GaN-on-Si epitaxial wafers grown by MOCVD
• Practical knowledge of Veeco and/or Aixtron MOCVD platforms
• Strong expertise in GaN material characterization techniques
• Solid understanding of GaN power and RF device physics
• Experience correlating epi parameters with device performance

Preferred Qualifications

• PhD with 3+ years or Master’s with 5+ years of industrial experience
• Experience with 650 V / 1200 V GaN power devices
• Familiarity with RF GaN HEMTs (LNA, PA, high‑frequency applications)
• Knowledge of reliability testing, HTOL, TDDB, dynamic RON
• Experience in high-volume manufacturing or pilot line environments

Soft Skills

• Strong analytical and data‑driven mindset
• Ability to work across epitaxy, device, and reliability teams
• Clear technical communication and documentation skills
• Hands‑on problem‑solving and ownership attitude

>Senior‑Level Responsibilities

• Define characterization roadmap for next‑generation GaN platforms
• Lead epi‑to‑device correlation strategy for power and RF technologies
• Mentor junior engineers and technicians
• Support IP generation and external technical publications