Lead/ Principal Engineer - GaN Epitaxy Development

Infineon Technologies; Singapore; On-site; SGD 75,000 - 100,000; Full time

Job summary

A leading semiconductor company in Singapore is seeking a specialized candidate with a Ph.D or Master's in Material Science to develop GaN epitaxial processes for power switching applications. The ideal candidate has over 5 years of experience with III-V hetero-epitaxy, strong MOCVD skills, and the ability to communicate effectively across global teams.

Qualifications

• 5+ years of industry experience focusing on III-V hetero-epitaxy MOCVD.
• Hands-on experience in MOCVD tools for AlGaN/GaN HEMT systems.
• Experience in metrology and material characterisation techniques.

Responsibilities

• Develop and optimise GaN on Si & GaN on Sapphire MOCVD epitaxy processes.
• Design GaN epitaxial layer stacks and growth recipes.
• Troubleshoot and resolve issues during material growth.

Skills

MOCVD operation

Data analysis

Communication skills

Education

Ph.D or Master's Degree in Material Science / Chemistry / Solid State Physics

Tools

AFM

TEM

XRD

PL

Ellipsometry

FTIR

Job description

Your Role

Key responsibilities in your new role

• Development and optimisation of GaN on Si & GaN on Sapphire MOCVD epitaxy processes for power switching applications
• Design GaN epitaxial layer stacks and growth recipes based on device requirements and performance targets
• Develop and implement new epitaxial processes for advanced wafer products
• Troubleshoot and resolve issues that arise during material growth to ensure high-quality epitaxial layers
• Work closely with device engineers to develop next-generation technologies

Your Profile

Qualifications and skills to help you succeed

• Ph.D or Master's Degree in Material Science / Chemistry / Solid State Physics with 5+ years of industry experience with focus on III-V hetero‑epitaxy MOCVD
• Hands‑on experience in operating MOCVD tools (Aixtron / Veeco / others) for AlGaN / GaN HEMT systems on silicon and sapphire substrates
• Experience in metrology and material characterisation techniques and tools (e.g. AFM, TEM, XRD, PL, ellipsometry, FTIR)
• Preferred to have experience in III‑V device processing tools and processes (e.g. RIE, wet etch, passivation)
• Preferred to have understanding of basic device concepts pertaining to AlGaN / GaN HEMTs for power switching applications
• Expertise in data organisation / data analysis
• Good communication skills and ability to work with cross‑functional teams in a global R&D organization