GaN Process Development Engineer

IVAM Microtechnology Network; Dresden; On-site; EUR 70,000 - 90,000; Full time

Job summary

X-FAB in Dresden, Germany is seeking a GaN / Wide Band Gap device and process development engineer to join our global Process Development team. You will lead development of GaN/WBG devices, define process flows, and perform TCAD simulations in an international environment.

The role involves DoE-based experiments, design of test structures, electrical characterization, and close collaboration with multiple departments and external partners. Automotive development experience is a plus.

Qualifications

• Master’s degree in electrical engineering, microelectronics or related fields.
• Minimum 3 years of experience in development, functionality, manufacturing, characterization and application of GaN / Wide Band Gap semiconductor devices.
• Experience with GaN / Wide Band Gap wafer processes.
• Experience in the development environment for the automotive industry is desirable.
• Strong communication skills in an international environment.
• Project management experience.
• Enjoy teamwork in a multicultural work environment.

Responsibilities

• Development of GaN / Wide Band Gap semiconductor devices and processes.
• Define semiconductor process flows and device architectures.
• TCAD simulation of devices and processes.
• Definition, implementation and evaluation of experiments using Design of Experiments (DoE) methodology.
• Development and design of test structures.
• Electrical characterization of GaN / Wide Band Gap devices.
• Process integration and cooperation with other departments within X-FAB.
• Offer technical support to customers.
• Cooperation with external partners.
• Management of development projects, working in interdisciplinary and international teams.

Skills

GaN / Wide Band Gap wafer processes

Project management

International communication

Multicultural teamwork

Automotive development experience

International collaboration

Education

Master’s degree in electrical engineering or microelectronics

Tools

TCAD simulation

DoE methodology

Test structures

Electrical characterization

Job description

X-FAB is looking for a GaN / Wide Band Gap device and process development engineer to join our global Process Development team, in Dresden, Germany, but working as part of an international organization developing Wide Band Gap technologies.

Your pitch:

• Development of GaN / Wide Band Gap semiconductor devices and processes.
• Define semiconductor process flows and device architectures.
• TCAD simulation of devices and processes.
• Definition, implementation and evaluation of experiments using Design of Experiments (DoE) methodology.
• Development and design of test structures.
• Electrical characterization of GaN / Wide Band Gap devices.
• Process integration and cooperation with other departments within X-FAB.
• Offer technical support to customers.
• Cooperation with external partners.
• Management of development projects, working in interdisciplinary and international teams.

Your profile:

• Master’s degree in the field of electrical engineering, microelectronics or related fields.
• Minimum 3 years of experience in development, functionality, manufacturing, characterization and application of GaN / Wide Band Gap semiconductor devices.
• Experience with GaN / Wide Band Gap wafer processes.
• Experience in the development environment for the automotive industry is desirable.
• Enjoy teamwork in a multicultural work environment.
• Interest in the development of modern semiconductor devices with the highest quality standards.
• Project management experience.
• Strong communication skills in an international environment.