(Senior) Principal Device Engineer (m/f/d) – GaN Power Devices

Nexperia; München; On-site; EUR 110,000 - 140,000; Full time

Job summary

Nexperia is seeking a senior leader to drive the development of GaN power devices. You will steer device architecture, perform TCAD simulations, and translate advanced device physics into manufacturable, high-performance solutions.

You will own performance targets, balance trade-offs between speed, reliability and manufacturability, and guide multidisciplinary teams from concept to industrialization in an international environment.

Qualifications

• MSc/PhD in semiconductor physics, electrical engineering, or related field
• Proven experience in GaN or wide bandgap device development
• Strong expertise in device physics, TCAD simulation, and semiconductor design
• Track record of leading complex, multidisciplinary technical projects
• Analytical, self-driven, and collaborative mindset in an international environment

Responsibilities

• Lead device architecture definition and optimization for GaN technologies
• Own performance targets and balance trade-offs across performance, reliability, and manufacturability
• Drive TCAD simulation, modeling, and design to support technology and product development
• Collaborate with cross-functional teams across process, characterization, reliability, and product engineering
• Support industrialization by delivering robust, scalable device concepts

Skills

GaN device development

TCAD simulation

Device physics

Project leadership

Analytical mindset

Education

MSc/PhD in semiconductor physics or EE

Tools

TCAD tools

Job description

About the Role

Join Nexperia and drive the development of next-generation GaN power devices. In this senior role, you will provide technical leadership in device architecture, simulation, and optimization—translating advanced device physics into high-performance, manufacturable solutions.

What You Will Do

• Lead device architecture definition and optimization for GaN technologies

• Own performance targets and balance trade-offs across performance, reliability, and manufacturability

• Drive TCAD simulation, modeling, and design to support technology and product development

• Collaborate with cross-functional teams across process, characterization, reliability, and product engineering

• Support industrialization by delivering robust, scalable device concepts

Your Profile

• Degree (MSc/PhD) or equivalent in semiconductor physics, electrical engineering, or related field

• Proven experience in GaN or wide bandgap device development

• Strong expertise in device physics, TCAD simulation, and semiconductor design

• Track record of leading complex, multidisciplinary technical projects

• Analytical, self-driven, and collaborative mindset in an international environment

Your Team

Join our growing global GaN team and help shape the future of power discretes. We are seeking talented individuals with deep technical expertise, an open mindset, and a drive to solve complex challenges and turn ideas into practical, scalable solutions.

D&I Statement

As an equal-opportunity employer, Nexperia values diversity not just because it is the right thing to do but because diverse teams perform better. We are dedicated to being inclusive, and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games. Our recruitment process is inclusive and accessible to all, and we consider all applicants fairly, as well as providing a safe work environment and reasonable adjustments where requested.

In addition, we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Women's groups. Nexperia is committed to increasing women in management positions to 30% by 2030.