Lead Principal Engineer Device Development RF-GaN (w/m/div)

Infineon Technologies AG; Regensburg; On-site; EUR 90,000 - 130,000; Full time

Job summary

Infineon Technologies AG in Regensburg, Germany, seeks a senior specialist in RF-GaN/Si device development to drive concepts through to production handover. You will optimize device performance and reliability, and develop characterization methods while coordinating with management, process development, characterization, product design and customers.

With 10+ years in GaN device technology, you will lead cross-site collaborations, push high-performance RF solutions, and contribute to

Qualifications

• Master's or PhD in Microelectronics, Electrical Engineering or Physics.
• 10+ years of GaN device technology development experience.
• Strong initiative, self-motivation and result orientation.
• Excellent English communication and presentation skills.

Responsibilities

• Develop RF-GaN/Si device technologies from concept to production handover.
• Implement novel process and device concepts for next-generation RF-GaN/Si platforms.
• Optimize device performance and reliability; develop characterization methods.
• Coordinate with project management, process development, characterization, product design and customers.
• Collaborate across international multi-site teams.
• Advance RF-GaN/Si device technology with focus on high-performance applications.

Skills

GaN device knowledge

RF engineering

Semiconductor physics

English communication

Education

Master/PhD in Microelectronics or related field

Job description

Shape the future: Development of leading-edge RF-GaN/Si device technologies for RF power applications from process concept to production handover

Creativity: Implementation of novel process and device concepts for next-generation RF-GaN/Si technology platforms

Data is everything: Optimization of device performance and reliability as well as development of required characterization methods

Stakeholder management: Coordination with project management, process development, characterization, product design and customers

Teamwork makes the dream work: Collaboration within an international multi-site environment

Take responsibility: Advancement of RF-GaN/Si device technology development with a focus on high-performance applications

Degree: You hold a Master's degree or PhD in Microelectronics, Electrical Engineering or Physics

Work experience: You bring more than 10 years of experience in GaN device technology development

Personality: You demonstrate a high level of initiative, self-motivation, result orientation and a proactive mindset

Working style: You contribute strong team player skills and a clear focus on achieving results and moving forward

Skills: You possess in-depth GaN device knowledge for RF applications as well as a strong background in semiconductor physics and technology

Languages: You communicate confidently in English and can present complex topics effectively

We are on a journey to create the best Infineon for everyone. We strive to create the best Infineon for everyone by embracing diversity and inclusion. We welcome applicants for who they are and offer a workplace built on trust, openness, respect and equal opportunity. Our hiring decisions are based on skills and experience. Even if you don't meet every requirement, we encourage you to apply. Please let your recruiter know if you need any accommodations during the interview process. Learn more about our various contact channels and about Diversity & Inclusion at Infineon.

Franziska Mantei https://www.linkedin.com/in/franziska-m-5057582/