GaN Process Development Engineer

X FAB; Dresden; On-site; EUR 70,000 - 100,000; Full time

Job summary

X-FAB Dresden is seeking a GaN / Wide Band Gap device and process development engineer to join our global Process Development team in Dresden, Germany, working in an international organization advancing Wide Band Gap technologies.

You will develop devices and processes, define flows and architectures, run TCAD and DoE experiments, design test structures, perform electrical characterization, and collaborate across departments and with external partners while coordinating development projects.

Qualifications

• Master's degree in electrical engineering or related field.
• 3+ years in GaN/WBG device development, fabrication, or characterization.
• Experience with GaN/WBG wafer processes.
• Automotive development environment a plus.
• Excellent teamwork and international collaboration.

Responsibilities

• Develop GaN / Wide Band Gap semiconductor devices and processes.
• Define semiconductor process flows and device architectures.
• TCAD simulation of devices and processes.
• DoE-based experiment design, implementation and evaluation.
• Develop and design test structures.
• Electrical characterization of GaN / WBG devices.
• Process integration with other departments.
• Provide technical support to customers.
• Collaborate with external partners and manage development projects in international teams.

Skills

Teamwork

Communication

Project management

International collaboration

Education

Master's degree in Electrical Engineering or related field

Tools

TCAD Simulation

DoE methodology

GaN/WBG wafer processes

Job description

Dresden, Germany
X-FAB is looking for a GaN / Wide Band Gap device and process development engineer to join our global Process Development team, in Dresden, Germany, but working as part of an international organization developing Wide Band Gap technologies.

Your Pitch

• Development of GaN / Wide Band Gap semiconductor devices and processes.


• Define semiconductor process flows and device architectures.


• TCAD simulation of devices and processes.


• Definition, implementation and evaluation of experiments using Design of Experiments (DoE) methodology.


• Development and design of test structures.


• Electrical characterization of GaN / Wide Band Gap devices.


• Process integration and cooperation with other departments within X-FAB.


• Offer technical support to customers.


• Cooperation with external partners.


• Management of development projects, working in interdisciplinary and international teams.

Your Profile

• Master's degree in the field of electrical engineering, microelectronics or related fields.


• Minimum 3 years of experience in development, functionality, manufacturing, characterization and application of GaN / Wide Band Gap semiconductor devices.


• Experience with GaN / Wide Band Gap wafer processes.


• Experience in the development environment for the automotive industry is desirable.


• Enjoy teamwork in a multicultural work environment.


• Interest in the development of modern semiconductor devices with the highest quality standards.


• Project management experience.


• Strong communication skills in an international environment.

Contact person : Mathilde Stenzel