Senior HBM Memory Architect for AI/ML Systems

Micron Technology, Inc; Richardson (TX); On-site; USD 120,000 - 160,000; Full time

Benefits offered by this job

Medical insurance

Dental insurance

Vision insurance

Paid family leave

Paid time off

Paid holidays

Job summary

Micron Technology, Inc is seeking a Principal HBM Design Architect in Richardson, Texas. In this role, you will design, simulate, and optimize advanced DRAM circuits for High Bandwidth Memory products, collaborating with teams on AI and ML solutions.

Successful candidates will have significant experience in CMOS design and memory architecture, along with strong analytical skills. The position offers comprehensive benefits, including medical and paid time off.

Qualifications

• 7+ years with BSEE or 5+ years with MSEE in relevant engineering experience.
• Strong knowledge of CMOS circuit design and semiconductor device physics.
• Experience with schematic entry and simulation tools.

Responsibilities

• Design, simulate, and optimize DRAM memory arrays.
• Evaluate functionality and propose correctness solutions.
• Analyze timing, area, power trade-offs in designs.

Skills

CMOS circuit design

Semiconductor device physics

Schematic entry and simulation tools

Power delivery analysis

Scripting languages (Python, Tcl, Perl)

Education

BSEE or MSEE

Tools

FineSim

HSPICE

Job description

Micron Technology, Inc is seeking a Principal HBM Design Architect in Richardson, Texas. In this role, you will design, simulate, and optimize advanced DRAM circuits for High Bandwidth Memory products, collaborating with teams on AI and ML solutions.

Successful candidates will have significant experience in CMOS design and memory architecture, along with strong analytical skills. The position offers comprehensive benefits, including medical and paid time off.