Senior HBM Design Engineer for High-Performance Memory

Micron Technology; Richardson (TX); On-site; USD 130,000 - 180,000; Full time

Benefits offered by this job

Medical benefits

Dental benefits

Vision benefits

Paid time off

Paid holidays

Job summary

Micron Technology in Richardson, Texas, seeks a seasoned memory designer to craft and analyze high‑speed memory designs, from I/O to core arrays, and to collaborate with design and verification teams worldwide.

The role involves power domain analysis, MBIST, and silicon validation, applying RTL design methods to deliver low‑power, high-reliability memory solutions for AI/ML workloads. A Master’s degree and 10 years in memory design are preferred, with strong team integration.

Qualifications

• Master’s degree required with 10 years of experience in memory design or related field.
• High-speed memory design on data paths from I/O to core array.
• Strong knowledge of MBIST and silicon validation.

Responsibilities

• Collaborate with design and verification teams worldwide.
• Develop memory products with focus on power, performance, and reliability.

Skills

High-speed memory design

Power domain analysis

MBIST

Digital design methodologies

ASIC design development

Memory core timing

Education

Master’s degree in Electrical Engineering, Physics, Computer Engineering, Semiconductor Engineering or a related field

Job description

Micron Technology in Richardson, Texas, seeks a seasoned memory designer to craft and analyze high‑speed memory designs, from I/O to core arrays, and to collaborate with design and verification teams worldwide.

The role involves power domain analysis, MBIST, and silicon validation, applying RTL design methods to deliver low‑power, high-reliability memory solutions for AI/ML workloads. A Master’s degree and 10 years in memory design are preferred, with strong team integration.