Senior HBM Memory Architect (PhD)

Micron Technology, Inc; Richardson (TX); On-site; USD 97,000 - 205,000; Full time

Job summary

Micron Technology, Inc. in Richardson, TX is seeking an Sr HBM Design Architect with a PhD or equivalent experience to lead advanced memory architecture work.

You will design and analyze digital/analog circuits for next‑gen HBM products, evaluate timing, area, and power, and drive architectural feasibility studies. The role demands deep CMOS circuit knowledge, schematic entry and simulation proficiency, and collaboration with cross‑functional teams.

Qualifications

• Extensive knowledge of CMOS circuit design and device physics.
• Schematic entry and simulation using Finesim and Hspice.
• Experience in DRAM product design (DDR/LPDDR/HBM/CIM) is a plus.

Responsibilities

• Design and analyze digital and analog circuits for memory products.
• Simulate, optimize and floor plan DRAM circuits for HBM architectures.
• Evaluate full-chip or block-level functionality and provide solutions for correct design delivery.
• Explore new architectures for future HBM products and perform feasibility analyses.
• Assist with layout and optimization of Memory, Logic, and Analog circuits.

Skills

CMOS Circuit Design

Device Physics

Schematic entry

DRAM design experience

Problem solving

Team player

Education

NCG Ph.D

NCG Master

Tools

Finesim

Hspice

Job description

Micron Technology, Inc. in Richardson, TX is seeking an Sr HBM Design Architect with a PhD or equivalent experience to lead advanced memory architecture work.

You will design and analyze digital/analog circuits for next‑gen HBM products, evaluate timing, area, and power, and drive architectural feasibility studies. The role demands deep CMOS circuit knowledge, schematic entry and simulation proficiency, and collaboration with cross‑functional teams.