HBM Design Architect – High-Speed Memory & Architecture

Micron Technology, Inc; Richardson (TX); On-site; USD 146,000 - 297,000; Full time

Benefits offered by this job

Paid family leave

Robust paid time-off program

Paid holidays

Job summary

Micron Technology, Inc in Richardson, Texas is seeking an HBM Design Architect to contribute to cutting-edge memory solutions. You will analyze and design digital and analog circuits for advanced HBM products in collaboration with a skilled team, focusing on functionality and optimization.

The ideal candidate will have a Bachelor’s degree in Electrical Engineering, at least 3 years of relevant experience, and expertise in CMOS design. This role offers a competitive salary range of $146,000 to $297,000 annually along with comprehensive benefits.

Qualifications

• 3+ years of relevant engineering experience.
• Strong knowledge of semiconductor device physics.
• Experience with schematic entry and circuit simulation.

Responsibilities

• Design and analyze digital and analog DRAM circuits.
• Evaluate functionality for blocks and ensure correctness.
• Analyze timing, power, and area trade-offs in designs.

Skills

CMOS circuit design

Problem-solving

Analytical skills

Education

Bachelor's degree in Electrical Engineering or related field

Tools

FineSim

HSPICE

Job description

Micron Technology, Inc in Richardson, Texas is seeking an HBM Design Architect to contribute to cutting-edge memory solutions. You will analyze and design digital and analog circuits for advanced HBM products in collaboration with a skilled team, focusing on functionality and optimization.

The ideal candidate will have a Bachelor’s degree in Electrical Engineering, at least 3 years of relevant experience, and expertise in CMOS design. This role offers a competitive salary range of $146,000 to $297,000 annually along with comprehensive benefits.