Senior HBM & High-Speed Interface Architect

Micron Technology

Richardson (TX)

On-site

USD 180,000 - 240,000

Full time

10 days ago

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Benefits offered by this job

Medical, dental and vision plans
Paid time off
Paid holidays

Job summary

Micron Technology seeks a senior memory interface architect to own HBM IO blocks and subsystems from architectural definition through silicon bring-up and post-silicon debug. You will define PHY interfaces, clocking, training, calibration, and power-management requirements for advanced heterogeneous systems.

Lead cross‑functional teams across front-end, layout, SI/PI, thermal, and packaging to optimize 2.5D/3D memory-interface implementations and drive robust, high‑performance builds for AI/HPC

Qualifications

  • 18+ years in memory/High-speed interface design (HBM, DDR, LPDDR).
  • Proven track record delivering IP/subsystems from architecture to silicon bring-up.
  • Expertise in high-speed memory interface architecture and analog/mixed-signal design.

Responsibilities

  • Own and deliver HBM IO blocks and subsystems from spec to silicon bring-up.
  • Define HBM PHY, die-to-die interfaces, clocking, training, calibration, and power management.
  • Lead pre/post-silicon issue analysis and multidisciplinary coordination across teams.
  • Mentor engineers through architecture/build reviews and problem solving.

Skills

HBM/DDR high-speed interfaces
RTL design & verification
Analog/mixed-signal design
Front-end implementation & timing
SystemVerilog

Education

Bachelor’s degree in Electrical/Computer Engineering or related field

Tools

Verilog/SystemVerilog
HSPICE/FastSPICE
RTL verification tools

Job description

Micron Technology seeks a senior memory interface architect to own HBM IO blocks and subsystems from architectural definition through silicon bring-up and post-silicon debug. You will define PHY interfaces, clocking, training, calibration, and power-management requirements for advanced heterogeneous systems.

Lead cross‑functional teams across front-end, layout, SI/PI, thermal, and packaging to optimize 2.5D/3D memory-interface implementations and drive robust, high‑performance builds for AI/HPC

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