HBM Memory Architect | Principal Design Engineer

Micron Technology, Inc.; Richardson (TX); On-site; USD 150,000 - 230,000; Full time

Benefits offered by this job

Medical/Dental/Vision plans

Paid time off

Paid holidays

Career growth

Job summary

Micron Technology, Inc. is seeking a Principal Design Engineer to architect and deliver high‑performance DRAM circuits for advanced technology nodes.

You will lead multi‑functional teams, develop innovative layouts, verify circuit integrity, and influence timing, power and reliability throughout tape‑out iterations. You will simulate with FINESIM/HSPICE, perform Verilog modeling, and drive design reviews, ensuring scalable and manufacturable memory solutions that meet aggressive performance

Qualifications

• Experience with DRAM circuits and memory subsystem architecture.
• Strong CAD and layout skills across floorplanning and routing.
• Proven simulation and analysis using FINESIM, HSPICE and Verilog.

Responsibilities

• Design and optimize DRAM circuits spanning digital, analog and memory cores.
• Develop floorplans, routing strategies, PDN, timing and die-size tradeoffs.
• Lead technical reviews and drive schematic/layout improvements.
• Coordinate layout/build resources and manage critical path issues.

Skills

VLSI design

CMOS circuit design

Leadership

Analytical skills

Education

BS in Electrical Engineering

MS or PhD in Electrical Engineering

Tools

Cadence Virtuoso

Physical layout

Floorplanning

FINESIM

HSPICE

Verilog

Job description

Micron Technology, Inc. is seeking a Principal Design Engineer to architect and deliver high‑performance DRAM circuits for advanced technology nodes.

You will lead multi‑functional teams, develop innovative layouts, verify circuit integrity, and influence timing, power and reliability throughout tape‑out iterations. You will simulate with FINESIM/HSPICE, perform Verilog modeling, and drive design reviews, ensuring scalable and manufacturable memory solutions that meet aggressive performance