Lead Memory Design Engineer: DRAM & HBM

Micron Technology

Richardson (TX)

On-site

USD 150,000 - 210,000

Full time

14 days+

Get more replies from employers

Send a job-specific resume in minutes.

Job summary

Micron Technology in Texas is seeking a Principal Design Engineer to architect high‑performance DRAM circuits for advanced memory nodes. You will lead layout, verification, and silicon validation with cross‑functional teams to deliver scalable, manufacturable solutions.

The role requires strong CMOS/VLSI background and hands‑on Cadence Virtuoso experience, plus circuit simulation using FINESIM, HSPICE, and Verilog.

Qualifications

  • BS in Electrical Engineering or related field with CMOS/VLSI coursework.
  • Hands-on Cadence Virtuoso, physical layout, and floorplanning experience.
  • Experience using FINESIM, HSPICE, and Verilog for circuit simulation.
  • Strong problem-solving and cross-functional collaboration.

Responsibilities

  • Design and optimize DRAM circuits meeting power, performance, and reliability targets.
  • Refine floorplans, routing, power delivery, sense margins, timings, and die size.
  • Run advanced simulations (FINESIM, HSPICE, Verilog) to analyze speed and noise.
  • Model parasitics, verify power and signal integrity; support tape-out.
  • Lead technical reviews and standardized best practices.
  • Coordinate and manage layout/build resources; navigate critical paths.
  • Interface across design, verification, test, and technology development.
  • Communicate project status and risks to stakeholders.

Skills

DRAM circuit design
CMOS/VLSI knowledge
Floorplanning
Circuit verification

Education

Bachelor's degree in Electrical Engineering or related field

Tools

Cadence Virtuoso
FINESIM
HSPICE
Verilog

Job description

Micron Technology in Texas is seeking a Principal Design Engineer to architect high‑performance DRAM circuits for advanced memory nodes. You will lead layout, verification, and silicon validation with cross‑functional teams to deliver scalable, manufacturable solutions.

The role requires strong CMOS/VLSI background and hands‑on Cadence Virtuoso experience, plus circuit simulation using FINESIM, HSPICE, and Verilog.

Get your free, confidential resume review.
or drag and drop your file here.
Similar jobs

Similar jobs worth comparing

Lead Memory Design Engineer, DRAM/HBM Innovation
Lead Memory Design Engineer, DRAM/HBM Innovation

Micron Technology, Inc • Richardson (TX)

On-site
USD 120,000 - 150,000
Robust paid time-off program
Paid family leave
Income protection programs
Memory Design Engineer, HBM — DRAM Core & Layout Lead
Memory Design Engineer, HBM — DRAM Core & Layout Lead

Micron Technology, Inc • Richardson (TX)

On-site
USD 80,000 - 100,000
Choice of medical, dental, and vision plans
Paid family leave
Robust paid time-off program and paid holidays
HBM Memory Architect & Principal DRAM Design Lead
HBM Memory Architect & Principal DRAM Design Lead

Micron • Garland (TX)

On-site
USD 150,000 - 210,000
Medical, dental & vision plans
Paid time off and holidays
Equal opportunity employer
Memory Design Engineer: CMOS & DRAM Innovation
Memory Design Engineer: CMOS & DRAM Innovation

Micron Memory Malaysia Sdn Bhd • Richardson (TX)

On-site
USD 150,000 - 190,000
Senior DRAM Design Architect
Senior DRAM Design Architect

Micron Technology, Inc • Richardson (TX)

On-site
USD 150,000 - 230,000
Principal Memory Design Engineer, HBM
Principal Memory Design Engineer, HBM

Micron Technology • Richardson (TX)

On-site
USD 150,000 - 210,000
Principal DRAM & HBM Design Engineer
Principal DRAM & HBM Design Engineer

1000 Micron Technology, Inc. • Richardson (TX)

On-site
USD 110,000 - 145,000
Medical, dental, and vision plans
Income protection
Paid family leave
+1
Lead HBM Design Architect — High-Speed Memory Innovation
Lead HBM Design Architect — High-Speed Memory Innovation

Micron Technology, Inc • Folsom (CA)

On-site
USD 130,000 - 180,000
Medical, dental, vision plans
Paid family leave
Robust paid time-off program
Memory Design Engineer - DRAM & Silicon Validation
Memory Design Engineer - DRAM & Silicon Validation

Micron Technology, Inc • Boise (ID)

On-site
USD 90,000 - 120,000
Senior Memory Design Engineer (DRAM/CMOS)
Senior Memory Design Engineer (DRAM/CMOS)

Micron Memory Malaysia Sdn Bhd • Richardson (TX)

On-site
USD 140,000 - 190,000
Medical benefits
Paid time off
Paid holidays