Staff Memory Design Engineer — DRAM & HBM Innovation

Micron Technology; Richardson (TX); On-site; USD 120,000 - 180,000; Full time

Benefits offered by this job

Medical/Dental/Vision

Paid time off

Paid holidays

Retirement plans

Job summary

Micron Technology is seeking a Staff Design Engineer to design, simulate and optimize DRAM circuits, collaborating with global teams to deliver manufacturable, high‑quality memory products. You will drive innovation in future memory generations and contribute to silicon‑to‑system development.

The role emphasizes CMOS circuit design, verification, and layout leadership, with responsibilities spanning schematic edits, floorplanning, and design reviews to ensure performance and cost efficiency.

Qualifications

• Design of digital, analog and memory core circuits per device specs.
• Experience simulating with FINESIM, HSPICE and VERILOG.
• Cross‑functional collaboration to ensure manufacturability and quality.

Responsibilities

• Design digital, analog and memory core circuits from concept to solution.
• Use AI‑enabled tools for schematic editing and layout floorplanning.
• Lead design reviews and document design decisions.

Skills

CMOS Circuit Design

VLSI

Cadence Virtuoso

HSPICE & VERILOG

Education

BS in Electrical Engineering

MS in Electrical Engineering

Tools

FINESIM

Job description

Micron Technology is seeking a Staff Design Engineer to design, simulate and optimize DRAM circuits, collaborating with global teams to deliver manufacturable, high‑quality memory products. You will drive innovation in future memory generations and contribute to silicon‑to‑system development.

The role emphasizes CMOS circuit design, verification, and layout leadership, with responsibilities spanning schematic edits, floorplanning, and design reviews to ensure performance and cost efficiency.