Principal HBM Design Engineer — High-Speed Memory

Micron Technology, Inc.; Richardson (TX); On-site; USD 140,000 - 190,000; Full time

Benefits offered by this job

Medical, dental, vision plans

Paid time off

Paid holidays

Job summary

Micron Technology, Inc. is seeking a Principal Engineer to lead HIG-HBM design efforts, crafting high-speed memory paths from I/O to core. You will simulate, optimize, and floor plan DRAM circuits, partnering across global teams to ensure top performance, power efficiency, and reliability.

Expect innovation across front-end and backend processes to deliver lowest power per bit solutions. You will drive front-end/back-end integration, work on test plans, and qualify designs to meet stringent

Qualifications

• Master's degree in Electrical Engineering, Physics, Computer Engineering, Semiconductor Engineering or related field.
• 10+ years of experience in the job offered or related field.
• Experience with memory design and front-end/backend integration preferred.

Responsibilities

• Design, simulate, and floor plan DRAM circuits and memory paths.
• Collaborate with global design and verification teams and supporting groups.
• Develop low-power, high-performance memory solutions and validate against specs.

Skills

High-speed memory design

Power domain analysis

MBIST & silicon validation

RTL design

Digital design flow

Memory timing & SI

Education

Master's degree in EE/Physics/CE/Semiconductor Eng

Tools

RTL synthesis tools

Physical design tools

Job description

Micron Technology, Inc. is seeking a Principal Engineer to lead HIG-HBM design efforts, crafting high-speed memory paths from I/O to core. You will simulate, optimize, and floor plan DRAM circuits, partnering across global teams to ensure top performance, power efficiency, and reliability.

Expect innovation across front-end and backend processes to deliver lowest power per bit solutions. You will drive front-end/back-end integration, work on test plans, and qualify designs to meet stringent