Principal Memory Design Engineer, HBM

Micron Technology; Richardson (TX); On-site; USD 150,000 - 210,000; Full time

Job summary

Micron Technology in Texas is seeking a Principal Design Engineer to architect high‑performance DRAM circuits for advanced memory nodes. You will lead layout, verification, and silicon validation with cross‑functional teams to deliver scalable, manufacturable solutions.

The role requires strong CMOS/VLSI background and hands‑on Cadence Virtuoso experience, plus circuit simulation using FINESIM, HSPICE, and Verilog.

Qualifications

• BS in Electrical Engineering or related field with CMOS/VLSI coursework.
• Hands-on Cadence Virtuoso, physical layout, and floorplanning experience.
• Experience using FINESIM, HSPICE, and Verilog for circuit simulation.
• Strong problem-solving and cross-functional collaboration.

Responsibilities

• Design and optimize DRAM circuits meeting power, performance, and reliability targets.
• Refine floorplans, routing, power delivery, sense margins, timings, and die size.
• Run advanced simulations (FINESIM, HSPICE, Verilog) to analyze speed and noise.
• Model parasitics, verify power and signal integrity; support tape-out.
• Lead technical reviews and standardized best practices.
• Coordinate and manage layout/build resources; navigate critical paths.
• Interface across design, verification, test, and technology development.
• Communicate project status and risks to stakeholders.

Skills

DRAM circuit design

CMOS/VLSI knowledge

Floorplanning

Circuit verification

Education

Bachelor's degree in Electrical Engineering or related field

Tools

Cadence Virtuoso

FINESIM

HSPICE

Verilog

Job description

Overview

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

As a Principal Design Engineer, you will build the future of memory by architecting and delivering high‑performance DRAM circuit compositions for advanced technology nodes. In this highly visible technical leadership role, you’ll develop innovation across building, layout, verification, and silicon validation. You will collaborate closely with multi‑functional teams to deliver scalable, manufacturable solutions for next‑generation memory products. Your work will directly influence performance, power, reliability, and time‑to‑market for Micron’s groundbreaking memory technologies.

Responsibilities

• Design and optimize DRAM circuits spanning digital, analog, and memory core subsystems to meet aggressive power, performance, and reliability targets
• Develop and refine floorplans, routing strategies, power delivery networks, sense margins, timings, and die‑size tradeoffs
• Perform advanced circuit simulations using FINESIM, HSPICE, and VERILOG, analyzing speed, power, noise, and long‑term reliability
• Model parasitics, verify power and signal integrity, and support validation, reticle experiments, and tape‑out revisions
• Drive simulation‑to‑silicon correlation, identify gaps, and recommend schematic and layout improvements
• Lead technical reviews, documentation, and best‑practice standardization across design and layout teams
• Coordinate and manage layout and build resources, tracking breakthroughs and resolving critical path issues
• Serve as a key technical interface across design, verification, test, and technology development while communicating project status and risks

Minimum Qualifications

• BS in Electrical Engineering or related field, or equivalent experience, with advanced coursework in CMOS circuit building, VLSI, and analog circuits
• Strong hands‑on expertise with Cadence Virtuoso, physical layout, and circuit floorplanning
• Proven experience using FINESIM, HSPICE, and VERILOG for complex circuit simulation and analysis
• Demonstrated ability to solve ambitious technical problems with significant design or innovation impact
• Deep knowledge of DRAM subsystem architecture, operation, or building, with experience leading multi‑functional technical efforts

Preferred Qualifications

• MS or PhD in Electrical Engineering or a related field, or equivalent experience
• Strong industry awareness of memory technology trends and emerging design methodologies
• Exceptional communication and leadership skills with the ability to influence across organizations

Equal‑Opportunity Statement

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.