GaN RF Power Amplifier Design Engineer (PhD Candidate)

Global Foundries

Essex Junction (VT)

On-site

USD 85,000 - 146,000

Full time

13 days ago
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Job summary

GlobalFoundries is seeking a New College Graduate (PhD) candidate to contribute to RF and wireless transmission design, including propagation modeling and PA development. The role involves design, simulation, bench testing, and cross-functional collaboration to optimize GaN power amplifiers for high-frequency applications.

Applicants should hold a PhD in a relevant field, with experience in RF/microwave PA design, GaN devices, and EM simulations using HFSS, ADS, or Cadence.

Qualifications

  • PhD in Electrical Engineering, Microelectronics, Physics, or related field.
  • Experience in RF/microwave power amplifier design, GaN device physics, or RFIC design.
  • Fundamental knowledge of RF power amplifier design, GaN HEMT devices, EM simulation tools, and RF measurement equipment.
  • Travel up to 10%.
  • Fluency in English language - written & verbal.

Responsibilities

  • Design and simulate RF GaN power amplifiers for wireless and defense applications.
  • Perform EM modeling, circuit simulation, and layout of RFIC designs.
  • Characterize and validate PA performance through bench testing and measurement.
  • Collaborate with cross-functional teams to optimize PA performance.
  • Contribute to IP by authoring invention disclosures and publications.

Skills

RF PA design
GaN HEMT devices
EM simulation tools
RF measurement
Power amplifier design

Education

PhD in Electrical Engineering

Tools

HFSS
ADS
Cadence

Job description

GlobalFoundries is seeking a New College Graduate (PhD) candidate to contribute to RF and wireless transmission design, including propagation modeling and PA development. The role involves design, simulation, bench testing, and cross-functional collaboration to optimize GaN power amplifiers for high-frequency applications.

Applicants should hold a PhD in a relevant field, with experience in RF/microwave PA design, GaN devices, and EM simulations using HFSS, ADS, or Cadence.

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