GaN RF Power Amplifier Design Engineer | mm‑Wave

Falcomm; Atlanta (GA); On-site; USD 110,000 - 170,000; Full time

Benefits offered by this job

Equity Package

Comprehensive Health, Dental, and Vis​

401(k) Retirement Plan

Paid Time Off (PTO) and Sick Leave

Job summary

Falcomm is seeking an RF/mm-Wave GaN Power Amplifier Design Engineer to drive advancement in energy-efficient RF PA technologies. You will design, simulate, test, and optimize amplifiers for high-frequency applications, collaborating across disciplines to push performance while meeting reliability and thermal targets.

Ideal candidates have a strong RF IC/PA background, GaN tapeout experience, and fluency with Cadence, ADS, SystemVue and HFSS.

Qualifications

• Master's degree with RF/microwave ICs design emphasis.
• 3+ years in RF PA design up to 60 GHz and GaN tapeout experience.
• Strong understanding of RF GaN device physics and PA architectures.

Responsibilities

• Design and develop RF power amplifiers for SATCOM, Wi‑Fi, and cellular.
• Create test plans, perform EM design on die, package and PCB.
• Present design reviews covering IC, EM, simulation and thermal data.
• Collaborate across teams and support product development from concept to mass production.

Skills

RF PA design

GaN technology

HFSS

Cadence Virtuoso

Keysight ADS

SystemVue

EM design

Pex extraction

EMC/EMI concepts

Education

Master's in Electrical Engineering (RF focus)

PhD in Electrical Engineering (preferred)

Tools

Cadence Virtuoso

Keysight ADS

Keysight SystemVue

Siemens Calibre

HFSS

Momentum

EMX

Job description

Falcomm is seeking an RF/mm-Wave GaN Power Amplifier Design Engineer to drive advancement in energy-efficient RF PA technologies. You will design, simulate, test, and optimize amplifiers for high-frequency applications, collaborating across disciplines to push performance while meeting reliability and thermal targets.

Ideal candidates have a strong RF IC/PA background, GaN tapeout experience, and fluency with Cadence, ADS, SystemVue and HFSS.