RF Design Engineer — GaN/LDMOS Power Amplifiers

Accelerate Professional Talent Solutions; Hanover Park (IL); On-site; USD 82,656 - 96,432; Full time

Benefits offered by this job

Direct involvement in engineering processes

Advanced facility committed to quality

Opportunity to solve complex RF problems

Job summary

A leading RF technology company in Hanover Park is seeking an RF Design Engineer to drive the design and development of power amplifier components. The ideal candidate will have a Bachelor's or Master's in Electrical Engineering with a focus on RF design, strong skills in GaN and LDMOS technologies, and proficiency in CAD tools. This full-time role offers a chance to work on cutting-edge applications across various sectors, contributing to innovative RF solutions in a collaborative environment.

Qualifications

• Experience designing RF amplifiers (50–100W) up to 18GHz.
• Strong expertise in GaN and/or LDMOS technologies.
• Solid RF chain knowledge including stabilization and matching.

Responsibilities

• Design, model, and simulate RF power amplifiers.
• Engineer and optimize high-performance amplifier designs.
• Collaborate across teams to ensure reliable system delivery.

Skills

RF amplifier design

GaN and LDMOS technologies

Signal integrity analysis

CAD and simulation tools

Teamwork

Education

Bachelor's or Master's in Electrical Engineering

Tools

ADS

Microwave Office

Ansys HFSS

Job description

A leading RF technology company in Hanover Park is seeking an RF Design Engineer to drive the design and development of power amplifier components. The ideal candidate will have a Bachelor's or Master's in Electrical Engineering with a focus on RF design, strong skills in GaN and LDMOS technologies, and proficiency in CAD tools. This full-time role offers a chance to work on cutting-edge applications across various sectors, contributing to innovative RF solutions in a collaborative environment.