Lead RF Design Architect — High-Power GaN/MMIC Front-Ends

TagoreTech, Inc.; Arlington Heights (IL); On-site; USD 180,000 - 240,000; Full time

Job summary

TagoreTech, Inc. is seeking a Principal RF Design Engineer to lead development of next-generation high-power RF front-end modules used in military, cellular, radar, drones, and medical applications. You will architect and design switches, PAs, LNAs, and FEMs using GaN/GaAs processes.

You will drive IP development, perform transistor-level designs, and guide EM modeling, lab characterization, and production test plans. A PhD or MSEE with extensive RFIC/MMIC experience is preferred.

Qualifications

• MSEE or PhD with extensive RFIC/MMIC design experience.
• Proven transistor-level RF design experience with GaN or GaAs.
• Strong background in non-linear modeling and RF simulations.
• Experience with lab characterization and high-power RF testing.

Responsibilities

• Lead design and development of high-power RF front-end components (Switches, PAs, LNAs, FEMs).
• Architect future RF product concepts and collaborate with Marketing and Design Management to establish product roadmaps and process requirements.
• Drive IP development, circuit-level innovations, and high-power package definition to satisfy thermal and electrical specs.
• Perform transistor-level circuit design, non-linear simulations, and optimization using Cadence, Keysight ADS, or AWR MWO.
• Execute 2D and 3D EM modeling of layouts, parasitics, and board interactions to ensure model-to-measurement correlation.
• Lead engineering characterization in the lab and verify performance across power, frequency, and temperature spectrums.
• Partner with Product & Test Engineering to establish production final test plans and specs.
• Provide technical oversight and mentorship to junior and mid-level RF engineers.

Skills

RF design

Transistor-level design

GaN/GaAs

Mentoring

Education

MSEE

PhD in RF/MMIC design

Tools

Cadence

Keysight ADS

AWR MWO

HFSS

Sonnet

Job description

TagoreTech, Inc. is seeking a Principal RF Design Engineer to lead development of next-generation high-power RF front-end modules used in military, cellular, radar, drones, and medical applications. You will architect and design switches, PAs, LNAs, and FEMs using GaN/GaAs processes.

You will drive IP development, perform transistor-level designs, and guide EM modeling, lab characterization, and production test plans. A PhD or MSEE with extensive RFIC/MMIC experience is preferred.