GaN RF Power Amplifier Engineer

GlobalFoundries inc.; Essex, Northern (MD, KY); Hybrid; USD 85,000 - 146,000; Full time

Job summary

GlobalFoundries inc. seeks a PhD-level RF GaN Power Amplifier Engineer based in Essex Junction to advance wireless and defense PA designs. You will design and simulate RF GaN PA circuits, perform EM modeling, and validate performance on test benches with cross-functional teams.

Ideal candidates hold a PhD in Electrical Engineering or related field and have hands-on RF/microwave PA design experience, GaN device physics, and proficiency in HFSS/ADS/Cadence. Up to 10% travel may be required.

Qualifications

• PhD in Electrical Engineering, Microelectronics, Physics, or related field.
• Experience in RF/microwave PA design, GaN device physics, or RFIC design.

Responsibilities

• Design and simulate RF GaN power amplifiers for wireless and defense applications.
• Perform EM modeling, circuit simulation, and layout of RFIC designs.
• Characterize and validate PA performance through bench testing and measurement.
• Collaborate with process engineering, modeling, and applications to optimize PA performance.
• Contribute to IP by authoring invention disclosures and to publications/conference presentations.
• Support technology transfer and design enablement for GaN RF platforms.

Skills

RF PA design

GaN HEMT devices

EM simulation tools

RF measurement equipment

Education

PhD in Electrical Eng / Microelectronics / Physics

Tools

HFSS

ADS

Cadence

Job description

GlobalFoundries inc. seeks a PhD-level RF GaN Power Amplifier Engineer based in Essex Junction to advance wireless and defense PA designs. You will design and simulate RF GaN PA circuits, perform EM modeling, and validate performance on test benches with cross-functional teams.

Ideal candidates hold a PhD in Electrical Engineering or related field and have hands-on RF/microwave PA design experience, GaN device physics, and proficiency in HFSS/ADS/Cadence. Up to 10% travel may be required.