A leading educational institution seeks a highly skilled RF Integration Engineer to contribute to developing next-generation RF semiconductor devices. Responsibilities include designing and optimizing GaN RF devices, process integration in nanofabrication facilities, and conducting reliability testing. The ideal candidate should possess a Ph.D. or a Bachelor's degree with significant experience in GaN device development and demonstrate advanced skills in EDA tools. This role promises an exciting opportunity within a dynamic research environment focused on cutting-edge technologies.
Qualifications
Ph.D. in a relevant field with research focus on GaN device processing.
Bachelor's degree + 5 years experience in GaN device development is acceptable.
Advanced skill in developing and using EDA tools for RF device design.
Responsibilities
Design and optimize GaN RF devices including discrete HEMTs and MMICs.
Work with process engineers to drive technology improvements.
Conduct device on-wafer and packaged characterization tests.
Skills
EDA tools for RF device design
GaN device development
Communication and interpersonal skills
Multitasking
Education
Ph.D. in a relevant field
Bachelor’s degree + 5 years experience
Tools
TCAD simulation
E-beam lithography
IC-CAP
Job description
A leading educational institution seeks a highly skilled RF Integration Engineer to contribute to developing next-generation RF semiconductor devices. Responsibilities include designing and optimizing GaN RF devices, process integration in nanofabrication facilities, and conducting reliability testing. The ideal candidate should possess a Ph.D. or a Bachelor's degree with significant experience in GaN device development and demonstrate advanced skills in EDA tools. This role promises an exciting opportunity within a dynamic research environment focused on cutting-edge technologies.