Senior RF Design Engineer: High-Power GaN/GaAs Frontend

Tagoretech; Arlington Heights (IL); On-site; USD 90,000 - 110,000; Full time

Benefits offered by this job

401(k)

401(k) matching

Flexible spending account

Health insurance

Health savings account

Paid time off

Vision insurance

Job summary

A leading semiconductor company is seeking a talented Senior RF Design Engineer to design high power RF switches and amplifiers utilizing wide bandgap technologies, such as GaN and GaAs. The ideal candidate will have a Master’s degree and 3-5 years of RF design experience. You will work collaboratively within a team to develop innovative solutions for Military communications and consumer applications. Tagore offers competitive compensation and benefits, fostering growth and innovation within a dynamic team environment.

Qualifications

• Master's degree preferred with 3-5 years of RF design experience.
• Ability to work on RF SOI switch and GaN PA design is advantageous.
• Capable of executing design tasks on schedule.

Responsibilities

• Design and develop High-Power RF Frontend components.
• Perform RF Design and simulation using Cadence and ADS tools.
• Collaborate with a team of engineers to define high power products.

Skills

RF design experience

Communication skills

Analog or RFIC design

Cadence/ADS/MWO tools

Basic device physics of GaN and GaAs

Education

Master’s degree in Electrical Engineering

Tools

Cadence

ADS

MWO

Job description

A leading semiconductor company is seeking a talented Senior RF Design Engineer to design high power RF switches and amplifiers utilizing wide bandgap technologies, such as GaN and GaAs. The ideal candidate will have a Master’s degree and 3-5 years of RF design experience. You will work collaboratively within a team to develop innovative solutions for Military communications and consumer applications. Tagore offers competitive compensation and benefits, fostering growth and innovation within a dynamic team environment.