RF GaN Technology Development Intern

GlobalFoundries inc.; Essex (VT); On-site; USD 28,000 - 55,000; Full time

Job summary

GlobalFoundries invites motivated students to join the Technology Development team for RF GaN in Vermont. As an intern you’ll work with process, integration, and device engineers to define and test GaN HEMT flows, and to analyze electrical performance, reliability and yield for RF applications.

We seek candidates pursuing a Master’s or PhD in Electrical Engineering or related fields, with solid device physics knowledge and semiconductor processing skills.

Qualifications

• Master’s or PhD in Electrical Engineering or related field.
• Solid knowledge of semiconductor device physics and characterization.
• Experience with GaN HEMT device characterization (DC, s-parameter, loadpull).

Responsibilities

• Innovate with device, test, and process integration teams to define, design, and set up process modules for GaN technologies.
• Collaborate to run and analyze experiments to meet performance, reliability, and yield objectives.
• Support qualification milestones from conception through manufacturing installation.

Skills

GaN HEMT testing

Device characterization

Semiconductor processing

English fluency

Education

Masters or PhD in Electrical Engineering

Tools

TCAD simulation

Load-pull

Job description

GlobalFoundries invites motivated students to join the Technology Development team for RF GaN in Vermont. As an intern you’ll work with process, integration, and device engineers to define and test GaN HEMT flows, and to analyze electrical performance, reliability and yield for RF applications.

We seek candidates pursuing a Master’s or PhD in Electrical Engineering or related fields, with solid device physics knowledge and semiconductor processing skills.