Staff SRAM Design Engineer - Lead High-Performance Memory

Samsung-Semiconductor; San Jose (CA); On-site; USD 163,000 - 253,000; Full time

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Job summary

Samsung Semiconductor in United States is seeking a Staff Engineer for SRAM circuit design to lead end-to-end development of high-performance memory solutions. You will drive design from architecture through verification for cutting-edge nodes, impacting PPA and silicon yield.

The role requires extensive SRAM experience, strong learning agility, and collaboration across design teams, layout, and tech development. Competitive pay and comprehensive benefits are offered.

Qualifications

• Bachelor's degree in electrical engineering with 10+ years of industry experience or master's degree in electrical engineering with 8+ years of experience strongly preferred.
• Prior SRAM or memory circuit design experience with proven track record in advanced nodes.
• Strong understanding of semiconductor device physics and process technology (FinFET, GAA, SOI).
• Expertise in SRAM architecture (bitcells, sense amplifiers, write drivers, read/write paths).
• Timing/power analysis, DFM, and design-for-manufacturability.
• Proficiency in circuit simulation and variation analysis.

Responsibilities

• Design and develop SRAM memory arrays, including bit cells, sense amplifiers, decoders and control circuits for advanced process nodes (e.g., 2nm, 3nm and 5nm).
• Optimize SRAM designs for performance, power and area (PPA) and yield.
• Develop custom layouts and perform physical design verifications (DRC, LVS).
• Evaluate trade-offs between speed, power, and area to meet design targets.
• Develop and improve SRAM design methodologies, including automation scripts for design, simulation, and verification.
• Work with product and test engineers to develop test plans and support silicon bring-up.
• Mentor Junior engineers, providing guidance on SRAM design techniques and best practices.
• Perform extensive circuit simulations using tools like HSPICE, finesim or cadence Spectre to validate SRAM functionality and performance.
• Contribute to patents, technical papers, or industry conferences to advance SRAM technology.

Education

Bachelors in Electrical Engineering (10+ years)

Masters in Electrical Engineering (8+ years)

SRAM/Memory IC design experience

Power/Performance/Area optimization

Scripting for automation (Python, Tcl, Perl)

Tools

HSPICE

Cadence Virtuoso

Cadence Tools (Spectre)

finesim

Python, Tcl, Perl for automation

Job description

Samsung Semiconductor in United States is seeking a Staff Engineer for SRAM circuit design to lead end-to-end development of high-performance memory solutions. You will drive design from architecture through verification for cutting-edge nodes, impacting PPA and silicon yield.

The role requires extensive SRAM experience, strong learning agility, and collaboration across design teams, layout, and tech development. Competitive pay and comprehensive benefits are offered.