Lead SRAM Design Engineer – High-Performance Memory

Samsung Semiconductor Inc.; San Jose (CA); Presencial; USD 163.000 - 253.000; Jornada completa

Ventajas ofrecidas por este puesto de trabajo

4+ weeks paid time off

Charitable giving match

Fertility/adoption stipend

Medical travel support

Onsite cafe & gym

Descripción de la vacante

Samsung Semiconductor, Inc. seeks a Staff Engineer to lead end-to-end SRAM circuit design for next-generation memory solutions. You will drive design of SRAM arrays, bit cells, decoders and sense amps across cutting-edge process nodes, while mentoring junior engineers and shaping design methodologies.

You will optimize performance, power and area, develop layouts, and run extensive simulations to ensure silicon success, contributing to patents and industry advancements.

Formación

• Bachelor's in EE with 10+ years, or Master's with 8+ years preferred.
• Experience in SRAM or memory circuit design on advanced nodes.
• Strong device physics understanding and process technology knowledge.
• Expertise in SRAM architecture including bitcells, sense amps, drivers and read/write paths.
• Proficiency with circuit simulation and variation analysis.
• Scripting in Python, Perl, TCL for design automation.

Responsabilidades

• Design and develop SRAM memory arrays with bit cells, sense amplifiers, decoders and control circuits for advanced nodes (2nm–5nm).
• Optimize SRAM for performance, power and area, and improve yield.
• Develop layouts and perform DRC/LVS, verify physical design.
• Evaluate speed/power/area trade-offs to meet targets.
• Create design methodologies and automation scripts for design and verification.
• Collaborate with product/test teams to support silicon bring-up.
• Mentor junior engineers on SRAM design techniques.
• Perform extensive circuit simulations with HSPICE, Spectre to validate functionality.
• Contribute to patents and papers to advance SRAM tech.

Conocimientos

SRAM design

HSPICE

Cadence Spectre

layout design

Python scripting

team leadership

memory architecture

DFM

Educación

Bachelor's degree in Electrical Engineering

Master's degree in Electrical Engineering

Herramientas

HSPICE

Cadence Virtuoso

Cadence Spectre

DRC/LVS

Descripción del empleo

Samsung Semiconductor, Inc. seeks a Staff Engineer to lead end-to-end SRAM circuit design for next-generation memory solutions. You will drive design of SRAM arrays, bit cells, decoders and sense amps across cutting-edge process nodes, while mentoring junior engineers and shaping design methodologies.

You will optimize performance, power and area, develop layouts, and run extensive simulations to ensure silicon success, contributing to patents and industry advancements.