Principal RF Front-End Architect for GaN/GaAs

TagoreTech, Inc.; Arlington Heights (IL); On-site; USD 170,000 - 250,000; Full time

Job summary

Tagore Tech is seeking a Principal RF Design Engineer to lead the development of high-power RF front-end components for military, cellular, radar, and aerospace applications. You will architect future concepts, drive IP, and collaborate across Marketing, Design Management, and Product teams.

Responsibilities include transistor-level RF design, non-linear simulations, and 2D/3D EM modeling with Cadence, Keysight ADS, or AWR MWO. Strong GaN/GaAs experience and lab characterization are required.

Qualifications

• MSEE with 15+ years or PhD with 10+ years in RFIC/MMIC design.
• Proven transistor-level RF design with GaN or GaAs processes.
• Expert in Cadence, Keysight ADS or AWR MWO; 2D/3D EM tools like HFSS or Sonnet.
• Strong device physics understanding and model translation.
• Hands-on RF characterization with high-power lab equipment.

Responsibilities

• Lead design and development of high-power RF front-end components (Switches, PAs, LNAs, FEMs).
• Architect future RF concepts; align roadmaps with Marketing and process needs.
• Drive IP development and circuit innovations; satisfy thermal/electrical requirements.
• Perform transistor-level design and non-linear simulations; optimize using Cadence/ADS/MWO.
• Execute 2D/3D EM modeling of layouts, parasitics, and board interactions.
• Lead lab characterization and validation across power, frequency, temperature.
• Partner with Product & Test Engineering to define production final test plans.
• Provide technical oversight and mentorship to junior engineers.

Skills

RF design

GaN/GaAs

RFIC/MMIC design

High-power RF

Cadence

Keysight ADS

AWR MWO

EM simulation tools

Lab RF testing

Education

MSEE with 15+ years OR PhD with 10+ years RFIC/MMIC design

Tools

Cadence

Keysight ADS

AWR MWO

HFSS

Sonnet

Job description

Tagore Tech is seeking a Principal RF Design Engineer to lead the development of high-power RF front-end components for military, cellular, radar, and aerospace applications. You will architect future concepts, drive IP, and collaborate across Marketing, Design Management, and Product teams.

Responsibilities include transistor-level RF design, non-linear simulations, and 2D/3D EM modeling with Cadence, Keysight ADS, or AWR MWO. Strong GaN/GaAs experience and lab characterization are required.