Senior RF Switch Architect — GaN MMICs for SATCOM (Remote)

Finwave Semiconductor, Inc.; San Diego (CA); Hybrid; USD 180,000 - 280,000; Full time

Benefits offered by this job

Competitive base salary

Healthcare benefits

401(k)

Stock options

Job summary

Finwave Semiconductor, Inc. invites a Senior Staff RF Switch Design Engineer to lead next-gen high-power microwave and mmWave switches using GaN-on-Silicon. You will shepherd architecture, design, layout, tape-out, and reliability for applications in aerospace, defense, SATCOM, and EW.

Role requires 10+ years in RF/mmic design, experience with GaN HEMT and high-power systems, and proficiency in ADS/AWR with EM tools. Remote-friendly but on-site-savvy collaboration is essential.

Qualifications

• Master’s or PhD in Electrical Engineering, RF/Microwave Engineering, Applied Physics, or related field.
• 10+ years of RF/microwave/MMIC design experience with RF switch expertise.
• GaN HEMT, GaAs pHEMT, PIN diode, SOI or related tech experience; GaN preferred.
• Experience in MMIC design, layout, tape-out, and measured-to-simulated performance.

Responsibilities

• Architect and design high-power SPST, SPDT, and multi-throw GaN RF switches.
• Push >100 W RF power handling and operation above 18 GHz.
• Optimize insertion loss, isolation, return loss, and power handling.
• Co-optimize GaN devices with modeling teams for best tradeoffs.
• Lead circuit and EM simulation for MMIC structures and package transitions.
• Own designs from feasibility to production release and qualification.

Skills

RF switch design

GaN technology

MMIC design

Millimeter-wave design

High-power RF

Device/circuit co-optimization

Thermal reliability

RF circuit theory

On-wafer measurements

RF design tradeoffs

Education

Master’s or PhD in Electrical Engineering or related field

Tools

Keysight ADS

Cadence AWR

HFSS

Momentum

Sonnet

Job description

Finwave Semiconductor, Inc. invites a Senior Staff RF Switch Design Engineer to lead next-gen high-power microwave and mmWave switches using GaN-on-Silicon. You will shepherd architecture, design, layout, tape-out, and reliability for applications in aerospace, defense, SATCOM, and EW.

Role requires 10+ years in RF/mmic design, experience with GaN HEMT and high-power systems, and proficiency in ADS/AWR with EM tools. Remote-friendly but on-site-savvy collaboration is essential.