Senior RF Design Engineer

Tagoretech; Arlington Heights (IL); On-site; USD 90,000 - 110,000; Full time

Benefits offered by this job

401(k)

401(k) matching

Flexible spending account

Health insurance

Health savings account

Paid time off

Vision insurance

Job summary

A leading semiconductor company is seeking a talented Senior RF Design Engineer to design high power RF switches and amplifiers utilizing wide bandgap technologies, such as GaN and GaAs. The ideal candidate will have a Master’s degree and 3-5 years of RF design experience. You will work collaboratively within a team to develop innovative solutions for Military communications and consumer applications. Tagore offers competitive compensation and benefits, fostering growth and innovation within a dynamic team environment.

Qualifications

• Master's degree preferred with 3-5 years of RF design experience.
• Ability to work on RF SOI switch and GaN PA design is advantageous.
• Capable of executing design tasks on schedule.

Responsibilities

• Design and develop High-Power RF Frontend components.
• Perform RF Design and simulation using Cadence and ADS tools.
• Collaborate with a team of engineers to define high power products.

Skills

RF design experience

Communication skills

Analog or RFIC design

Cadence/ADS/MWO tools

Basic device physics of GaN and GaAs

Education

Master’s degree in Electrical Engineering

Tools

Cadence

ADS

MWO

Job description

Tagore Tech is pioneering a new semiconductor process that enables high RF power at competitive price points. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that address RF design challenges and accelerate time- to-market for a wide range of applications, from 5G cellular infrastructure to consumer electronics, automotive, and defense and security. Our high-power products, including RF switches, RF low-noise amplifiers, and RF power amplifiers, are essential for wireless infrastructure and high-power radios. We partner with leading semiconductor foundries and assembly houses to deliver products that offer premium quality and proven high reliability. Learn more about us atwww.tagoretech.com .

Job Overview:

Tagore Tech is seeking a talented and motivatedSenior RF Design Engineerto join our team. In this role, you will join our elite team of RF professionals who are creating the product and technology for the next generation high power radios used in Military communications, Cellular infrastructure, Radar, Drones and Medical applications. You will be responsible for designing the next generation High Power RF switches, Power Amplifier, Low Noise Amplifiers and High- Power RF Front-End Module using Wide bandgap Technology of GaN and GaAs.

Duties:

• You will be responsible for the design and development of High-Power RF Frontend components of RF switch, PA, LNA and Front-end module
• Perform RF Design and simulation using Cadence, ADS/MWO tools. 2D and 3D EM modeling of layout and package parasitic properties
• Work within a group of other RF design engineers, layout engineers, packaging engineers and marketing team to define and design high power products
• Define high power packages to meet thermal and electrical requirements.
• You will prepare design review material to present to the product development team.
• Work with validation engineers in lab to complete engineering characterization of our products.
• Work with Product & Test team in defining production final test documents.
• You will interface design management to create detailed specifications, report design progress, drive future IP development, simulate and verify chip-level performance, and to collect, track, and resolve any performance or circuit design problems.

Skills:

• MSEE+ 3 – 5 years of RF design experience or PhD + 3 years of RF design experience.
• Prior design experience in RF SOI switch, PIN Diode Switch, GaN PA design is a big plus
• Good communication skills, ability to break down complex problems, set priorities, report progress, execute to a schedule, and have strong teamwork skills
• Basic device physics of GaN and GaAs.
• Must be experienced in analog or RFIC design at the chip level.
• Must understand the basic device physics, have the ability to develop and use advanced linear and nonlinear models or simulation techniques and be able to translate between the model, simulation, physical implementation, and the measured performance of a device.
• Requires experience in Cadence/ADS/MWO simulation tools, analog circuit test characterization techniques and equipment.

This position offers an exciting opportunity for professional growth in a fast-paced environment where innovation is encouraged. If you are passionate about RF engineering and eager to contribute your expertise, we invite you to apply for this rewarding role. Tagore offers a competitive compensation and benefits package, as well as opportunities for professional growth and development. We’re a small team, where close collaboration and innovation is key!

Job Type:

Full-Time

Pay:

From $100,000.00 per year

• 401(k)
• 401(k) matching
• Flexible spending account
• Health insurance
• Health savings account
• Paid time off
• Vision insurance

Schedule:

• 8 hour shift

Education:

• Master’s (Preferred)

Experience:

• RF Design: 3 years (Required)

Ability to Commute:

• Arlington Heights, IL 60004 (Required)

Ability to Relocate:

• Arlington Heights, IL 60004: Relocate before starting work (Required)