Principal RF Design Engineer

TagoreTech Inc.; Arlington Heights (IL); On-site; USD 170,000 - 250,000; Full time

Benefits offered by this job

Competitive compensation

Professional growth opportunities

Job summary

TagoreTech Inc. is seeking a Principal RF Design Engineer to lead the creation of next-generation high-power RF front-end technology for applications spanning Military Communications, Cellular Infrastructure, Radar, Drones, and Medical devices.

You will architect and design switches, PAs, LNAs, and FEMs using GaN and GaAs processes, while guiding the RF engineering team and collaborating with Marketing and Design Management on roadmaps.

Qualifications

• Proven track record in RF design for high-power applications.
• Experience with GaN/GaAs processes for RF front-end modules.
• Ability to mentor junior and mid-level RF engineers.

Responsibilities

• Lead design and development of high-power RF switch, PA, LNA, and FEM components.
• Architect RF product concepts and roadmaps with cross-functional teams.
• Drive IP development and high-power package parasitics consideration.
• Perform transistor-level design and non-linear simulations using Cadence, ADS, or MWO.
• Conduct 2D/3D EM modeling of layouts and board-level interactions.
• Lead lab characterization and validation across power, frequency, and temperature.
• Collaborate with Product & Test Eng to define production test plans.
• Provide technical oversight and conduct design reviews.

Skills

RF design

GaN/GaAs

Mentor engineers

Transistor-level design

EM modeling

Education

MSEE or PhD in RF/mmic field

Tools

Cadence

Keysight ADS

AWR MWO

HFSS

Sonnet

Job description

TagoreTech is pioneering a new semiconductor process that enables high RF power at competitive price points. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, Phoenix, AZ and Kolkata India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that address RF design challenges and accelerate time- to-market for a wide range of applications, from 5G cellular infrastructure to consumer electronics, automotive, and defense and security. Our high-power products, including RF switches, RF low-noise amplifiers, and RF power amplifiers, are essential for wireless infrastructure and high-power radios. We partner with leading semiconductor foundries and assembly houses to deliver products that offer premium quality and proven high reliability. Learn more about us at www.tagoretech.com .

Tagore Tech is seeking a talented and motivated Principal RF Design Engineer to join our elite RF engineering team. In this role, you will lead the creation of next-generation product technology for high-power radios used in Military Communications, Cellular Infrastructure, Radar, Unmanned Aerial Vehicles (Drones), and Medical applications. You will be responsible for architecting and designing high-power RF switches, Power Amplifiers (PAs), Low Noise Amplifiers (LNAs), and integrated Front-End Modules (FEMs) leveraging Wide Bandgap (GaN and GaAs) technologies.

Key Responsibilities

• Lead the design and development of next-generation high-power RF front-end components (Switches, PAs, LNAs, and integrated FEMs).
• Architect future RF product concepts and collaborate with Marketing and Design Management to establish product roadmaps and semiconductor process requirements.
• Drive IP development, circuit-level innovations, and high-power package definition to satisfy thermal and electrical requirements.
• Perform transistor-level circuit design, non-linear simulations, and optimization using Cadence Virtuoso, Keysight ADS, or AWR Microwave Office (MWO).
• Execute 2D and 3D EM modeling of chip layouts, package parasitics, and board-level interactions to ensure tight model-to-measurement correlation.
• Lead engineering characterization in the lab, working alongside validation teams to verify performance across power, frequency, and temperature spectrums.
• Partner with Product & Test Engineering to establish production final test plans and specifications.
• Provide technical oversight, design reviews, and mentorship to junior and mid-level RF engineers.

Qualifications

Education:

MSEE with 15+ years OR PhD with 10+ years of hands-on RFIC / MMIC design experience. * **

Core Design Expertise:

Proven track record in transistor-level RF design, particularly with high-power RF circuits utilizing GaN or GaAs processes.

Tools & Simulation:

Expert-level proficiency with Cadence, Keysight ADS, or AWR MWO, including non-linear modeling and 2D/3D EM simulation tools (e.g., HFSS, Sonnet).

Semiconductor Physics:

Strong understanding of basic device physics, linear/nonlinear model translation, and physical implementation constraints.

Lab & Test:

Practical experience in RF characterization techniques and high-power lab equipment (VNAs, spectrum analyzers, power meters, load-pull systems).

Preferred Experience:

Prior design experience with RF SOI switches, PIN diode switches, or high-efficiency GaN Power Amplifiers. Deep understanding of high-power thermal management and custom RF package parasitic co-design.

Success Traits

• Strong ownership mindset and ability to drive issues to closure.
• Ability to translate complex technical tradeoffs to non-technical stakeholders, marketing partners, and executive leadership.
• Thrives in a fast-paced, innovation-focused environment with evolving priorities.
• Analytical thinker with a bias toward action and continuous improvement.

This position offers an exciting opportunity for professional growth in a fast-paced environment where innovation is encouraged. Tagore offers a competitive compensation and benefits package, as well as opportunities for professional growth and development.