Principal RF Design Engineer

TagoreTech, Inc.; Arlington Heights (IL); On-site; USD 170,000 - 250,000; Full time

Job summary

Tagore Tech is seeking a Principal RF Design Engineer to lead the development of high-power RF front-end components for military, cellular, radar, and aerospace applications. You will architect future concepts, drive IP, and collaborate across Marketing, Design Management, and Product teams.

Responsibilities include transistor-level RF design, non-linear simulations, and 2D/3D EM modeling with Cadence, Keysight ADS, or AWR MWO. Strong GaN/GaAs experience and lab characterization are required.

Qualifications

• MSEE with 15+ years or PhD with 10+ years in RFIC/MMIC design.
• Proven transistor-level RF design with GaN or GaAs processes.
• Expert in Cadence, Keysight ADS or AWR MWO; 2D/3D EM tools like HFSS or Sonnet.
• Strong device physics understanding and model translation.
• Hands-on RF characterization with high-power lab equipment.

Responsibilities

• Lead design and development of high-power RF front-end components (Switches, PAs, LNAs, FEMs).
• Architect future RF concepts; align roadmaps with Marketing and process needs.
• Drive IP development and circuit innovations; satisfy thermal/electrical requirements.
• Perform transistor-level design and non-linear simulations; optimize using Cadence/ADS/MWO.
• Execute 2D/3D EM modeling of layouts, parasitics, and board interactions.
• Lead lab characterization and validation across power, frequency, temperature.
• Partner with Product & Test Engineering to define production final test plans.
• Provide technical oversight and mentorship to junior engineers.

Skills

RF design

GaN/GaAs

RFIC/MMIC design

High-power RF

Cadence

Keysight ADS

AWR MWO

EM simulation tools

Lab RF testing

Education

MSEE with 15+ years OR PhD with 10+ years RFIC/MMIC design

Tools

Cadence

Keysight ADS

AWR MWO

HFSS

Sonnet

Job description

Tagore Tech is seeking a talented and motivated Principal RF Design Engineer to join our elite RF engineering team. In this role, you will lead the creation of next-generation product technology for high-power radios used in Military Communications, Cellular Infrastructure, Radar, Unmanned Aerial Vehicles (Drones), and Medical applications. You will be responsible for architecting and designing high-power RF switches, Power Amplifiers (PAs), Low Noise Amplifiers (LNAs), and integrated Front-End Modules (FEMs) leveraging Wide Bandgap (GaN and GaAs) technologies.

Key Responsibilities

• Lead the design and development of next-generation high-power RF front-end components (Switches, PAs, LNAs, and integrated FEMs).
• Architect future RF product concepts and collaborate with Marketing and Design Management to establish product roadmaps and semiconductor process requirements.
• Drive IP development, circuit-level innovations, and high-power package definition to satisfy thermal and electrical requirements.
• Perform transistor-level circuit design, non-linear simulations, and optimization using Cadence Virtuoso, Keysight ADS, or AWR Microwave Office (MWO).
• Execute 2D and 3D EM modeling of chip layouts, package parasitics, and board-level interactions to ensure tight model-to-measurement correlation.
• Lead engineering characterization in the lab, working alongside validation teams to verify performance across power, frequency, and temperature spectrums.
• Partner with Product & Test Engineering to establish production final test plans and specifications.
• Provide technical oversight, design reviews, and mentorship to junior and mid-level RF engineers.

Qualifications

Education: MSEE with 15+ years OR PhD with 10+ years of hands-on RFIC / MMIC design experience. * **

Core Design Expertise: Proven track record in transistor-level RF design, particularly with high-power RF circuits utilizing GaN or GaAs processes.

Tools & Simulation: Expert-level proficiency with Cadence, Keysight ADS, or AWR MWO, including non-linear modeling and 2D/3D EM simulation tools (e.g., HFSS, Sonnet).

Semiconductor Physics: Strong understanding of basic device physics, linear/nonlinear model translation, and physical implementation constraints.

Lab & Test: Practical experience in RF characterization techniques and high-power lab equipment (VNAs, spectrum analyzers, power meters, load-pull systems).

_ Preferred Experience: _ Prior design experience with RF SOI switches, PIN diode switches, or high-efficiency GaN Power Amplifiers. Deep understanding of high-power thermal management and custom RF package parasitic co-design.

Success Traits

• Strong ownership mindset and ability to drive issues to closure.
• Ability to translate complex technical tradeoffs to non-technical stakeholders, marketing partners, and executive leadership.
• Thrives in a fast-paced, innovation-focused environment with evolving priorities.
• Analytical thinker with a bias toward action and continuous improvement.

This position offers an exciting opportunity for professional growth in a fast-paced environment where innovation is encouraged. Tagore offers a competitive compensation and benefits package, as well as opportunities for professional growth and development.