Principal RF Design Engineer

Rippling, Inc.; Arlington Heights (IL); On-site; USD 180,000 - 250,000; Full time

Benefits offered by this job

Competitive compensation

Professional growth opportunities

Job summary

TagoreTech in the United States (Arlington Heights, IL) seeks a Principal RF Design Engineer to lead next-generation high-power RF front-end technology for defense, telecom, and automotive applications. You will architect and design switches, power amplifiers, LNAs, and FEMs using GaN/GaAs processes, guiding a team of engineers across the product life cycle.

From transistor-level design to nonlinear simulations and 2D/3D EM modeling, you will collaborate with marketing, test, and product teams

Qualifications

• Advanced RFIC/MMIC design experience with GaN/GaAs.
• Experience with nonlinear modeling and EM simulations.
• Lab RF characterization with VNAs and power meters.

Responsibilities

• Lead design of next-generation high-power RF switches, PAs, LNAs, and FEMs.
• Architect future RF product concepts and collaborate to set roadmaps and requirements.
• Drive IP development and circuit-level innovations for thermal and electrical targets.
• Perform transistor-level design and nonlinear optimization using Cadence, ADS, or MWO.
• Execute 2D/3D EM modeling of layouts, parasitics, and board interactions.

Skills

RF design

GaN/GaAs design

Transistor-level design

Education

MSEE with 15+ years OR PhD with 10+ years RFIC/MMIC

Tools

Cadence

Keysight ADS

AWR Microwave Office

HFSS

Sonnet

Job description

TagoreTech is pioneering a new semiconductor process that enables high RF power at competitive price points. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, Phoenix, AZ and Kolkata India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that address RF design challenges and accelerate time- to-market for a wide range of applications, from 5G cellular infrastructure to consumer electronics, automotive, and defense and security. Our high-power products, including RF switches, RF low-noise amplifiers, and RF power amplifiers, are essential for wireless infrastructure and high-power radios. We partner with leading semiconductor foundries and assembly houses to deliver products that offer premium quality and proven high reliability. Learn more about us at www.tagoretech.com .

Tagore Tech is seeking a talented and motivated Principal RF Design Engineer to join our elite RF engineering team. In this role, you will lead the creation of next-generation product technology for high-power radios used in Military Communications, Cellular Infrastructure, Radar, Unmanned Aerial Vehicles (Drones), and Medical applications. You will be responsible for architecting and designing high-power RF switches, Power Amplifiers (PAs), Low Noise Amplifiers (LNAs), and integrated Front-End Modules (FEMs) leveraging Wide Bandgap (GaN and GaAs) technologies.

Key Responsibilities

• Lead the design and development of next-generation high-power RF front-end components (Switches, PAs, LNAs, and integrated FEMs).
• Architect future RF product concepts and collaborate with Marketing and Design Management to establish product roadmaps and semiconductor process requirements.
• Drive IP development, circuit-level innovations, and high-power package definition to satisfy thermal and electrical requirements.
• Perform transistor-level circuit design, non-linear simulations, and optimization using Cadence Virtuoso, Keysight ADS, or AWR Microwave Office (MWO).
• Execute 2D and 3D EM modeling of chip layouts, package parasitics, and board-level interactions to ensure tight model-to-measurement correlation.
• Lead engineering characterization in the lab, working alongside validation teams to verify performance across power, frequency, and temperature spectrums.
• Partner with Product & Test Engineering to establish production final test plans and specifications.
• Provide technical oversight, design reviews, and mentorship to junior and mid-level RF engineers.

Qualifications

Education: MSEE with 15+ years OR PhD with 10+ years of hands-on RFIC / MMIC design experience. * **

Core Design Expertise: Proven track record in transistor-level RF design, particularly with high-power RF circuits utilizing GaN or GaAs processes.

Tools & Simulation: Expert-level proficiency with Cadence, Keysight ADS, or AWR MWO, including non-linear modeling and 2D/3D EM simulation tools (e.g., HFSS, Sonnet).

Semiconductor Physics: Strong understanding of basic device physics, linear/nonlinear model translation, and physical implementation constraints.

Lab & Test: Practical experience in RF characterization techniques and high-power lab equipment (VNAs, spectrum analyzers, power meters, load-pull systems).

Preferred Experience

Prior design experience with RF SOI switches, PIN diode switches, or high-efficiency GaN Power Amplifiers. Deep understanding of high-power thermal management and custom RF package parasitic co-design.

Success Traits

• Strong ownership mindset and ability to drive issues to closure.
• Ability to translate complex technical tradeoffs to non-technical stakeholders, marketing partners, and executive leadership.
• Thrives in a fast-paced, innovation-focused environment with evolving priorities.
• Analytical thinker with a bias toward action and continuous improvement.

This position offers an exciting opportunity for professional growth in a fast-paced environment where innovation is encouraged. If you are passionate about RF engineering and eager to contribute your expertise,

• Tagore offers a competitive compensation and benefits package, as well as opportunities for professional growth and development.