Principal RF Design Engineer — High-Power GaN/MMIC Front-Ends

Rippling, Inc.

Arlington Heights (IL)

On-site

USD 180,000 - 250,000

Full time

19 hours ago

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Benefits offered by this job

Competitive compensation

Professional growth opportunities

Job summary

TagoreTech in the United States (Arlington Heights, IL) seeks a Principal RF Design Engineer to lead next-generation high-power RF front-end technology for defense, telecom, and automotive applications. You will architect and design switches, power amplifiers, LNAs, and FEMs using GaN/GaAs processes, guiding a team of engineers across the product life cycle.

From transistor-level design to nonlinear simulations and 2D/3D EM modeling, you will collaborate with marketing, test, and product teams

Qualifications

Advanced RFIC/MMIC design experience with GaN/GaAs.
Experience with nonlinear modeling and EM simulations.
Lab RF characterization with VNAs and power meters.

Responsibilities

Lead design of next-generation high-power RF switches, PAs, LNAs, and FEMs.
Architect future RF product concepts and collaborate to set roadmaps and requirements.
Drive IP development and circuit-level innovations for thermal and electrical targets.
Perform transistor-level design and nonlinear optimization using Cadence, ADS, or MWO.
Execute 2D/3D EM modeling of layouts, parasitics, and board interactions.