HBM Design Architect: Memory & 3D Integration Leader

Micron Technology, Inc.; Richardson (TX); On-site; USD 150,000 - 210,000; Full time

Benefits offered by this job

Medical, dental, and vision plans

Paid time off

Benefits guide available

Job summary

Micron Technology, Inc. is seeking an HBM Design Architect in Richardson, TX to lead architecture and de-risking for novel memory and integration technologies.

You will translate device capabilities into product architectures, define product-level requirements, and drive cross-team collaboration to achieve performance, power, and reliability targets. The role demands deep memory technology knowledge, hands-on experience with DRAM/HBM design, and ability to influence roadmap decisions across

Qualifications

• BS in Electrical Engineering, Physics, Materials Science, or related field; 7+ years experience, MS 5+, or PhD 3+ years.
• Solid grounding in mainstream DRAM and/or HBM product architecture and design (array, periphery, datapath, timing, power).
• Deep understanding of DRAM or emerging memory cell and array operation (sensing, retention, disturb, variability).
• Working knowledge of semiconductor process technology and its impact on device and circuit behavior.

Responsibilities

• Lead architecture and feasibility assessments for emerging memories (DRAM, gain cell, stacked/vertical DRAM) and advanced integration (hybrid bonding, fine-pitch TSV).
• Apply mainstream DRAM/HBM product knowledge to define what a new technology must deliver to be product-viable.
• Translate device and process characteristics into product-level requirements for bandwidth, latency, power, thermals, density, and reliability.
• Identify technology–product gaps, define technology targets, and drive de-risking plans including test vehicles, DOEs, and modeling/simulation strategies.
• Partner with process integration, device, packaging, and design teams to define technology-to-product intercept points and decision criteria.
• Lead system-technology co-optimization (STCO) studies spanning array architecture, periphery/CMOS-under-array, interconnect, PDN, and thermal trade-offs.
• Develop roadmap proposals and present recommendations to technical leadership and cross-site working groups (LLM).

Skills

DRAM/HBM architecture

Device and array operation knowledge

Semiconductor process technology

STCO and cross-functional coordination

Education

BS in Electrical Engineering, Physics, Materials Science, or related field

Job description

Micron Technology, Inc. is seeking an HBM Design Architect in Richardson, TX to lead architecture and de-risking for novel memory and integration technologies.

You will translate device capabilities into product architectures, define product-level requirements, and drive cross-team collaboration to achieve performance, power, and reliability targets. The role demands deep memory technology knowledge, hands-on experience with DRAM/HBM design, and ability to influence roadmap decisions across