HBM Design Architect - Lead Next-Gen Memory Tech

Micron Technology, Inc.; Richardson (TX); On-site; USD 150,000 - 210,000; Full time

Benefits offered by this job

Medical plan

Dental plan

Vision plan

Paid time off

Paid holidays

Wellbeing programs

Job summary

Micron Technology, Inc. in Richardson, Texas, is seeking an HBM Design Architect to lead architecture and feasibility assessments for emerging memories and advanced integration.

You will translate device characteristics into product-level requirements for bandwidth, latency, power, and reliability, guiding de-risking plans with multiple teams. You will partner across process, device, packaging, and design groups to optimize system-level trade-offs and drive roadmap decisions for next-generation

Qualifications

• BS in Electrical Engineering, Physics, Materials Science, or related field; 7+ years experience; MS 5+ years; PhD 3+ years.
• Solid grounding in mainstream DRAM and/or HBM product architecture and design.
• Deep understanding of DRAM or emerging memory cell and array operation (sensing, retention, disturb, variability).

Responsibilities

• Lead architecture and feasibility assessments for emerging memories (DRAM, gain-cell, stacked DRAM) and advanced integration (hybrid bonding, fine-pitch TSV).
• Apply mainstream DRAM/HBM product knowledge to define what a new technology must deliver to be product-viable.
• Translate device and process characteristics into product-level requirements for bandwidth, latency, power, thermals, density, and reliability.
• Identify technology–product gaps, define technology targets, and drive de-risking plans including test vehicles, DOEs, and modeling/simulation strategies.
• Partner with process integration, device, packaging, and design teams to define technology-to-product intercept points and decision criteria.
• Lead system-technology co-optimization (STCO) studies across array architecture, periphery, interconnect, PDN, and thermal trade-offs.
• Develop roadmap proposals and present recommendations to technical leadership and cross-site groups.

Skills

HBM/DRAM architecture knowledge

System-level design

Cross-functional collaboration

Education

BS in Electrical Engineering, Physics, or Materials Science

MS in relevant field

PhD (preferred)

Tools

DOE

Modeling/simulation

Job description

Micron Technology, Inc. in Richardson, Texas, is seeking an HBM Design Architect to lead architecture and feasibility assessments for emerging memories and advanced integration.

You will translate device characteristics into product-level requirements for bandwidth, latency, power, and reliability, guiding de-risking plans with multiple teams. You will partner across process, device, packaging, and design groups to optimize system-level trade-offs and drive roadmap decisions for next-generation