Lead HBM Memory Architect for Next-Gen AI/ML

Micron Memory Malaysia Sdn Bhd; Richardson (TX); On-site; USD 180,000 - 230,000; Full time

Job summary

Micron Technology in Richardson, Texas, seeks a Principal HBM Design Architect to design, simulate, optimize, and floorplan advanced DRAM circuits for next‑generation High Bandwidth Memory products. You will collaborate with global teams across digital, analog, and mixed‑signal domains to ensure performance and power efficiency.

The role involves pathfinding for new architectures, design reviews, and driving continuous improvement of design methodologies, with on‑site work in Richardson, TX.

Qualifications

• BSEE with 7+ years or MSEE with 5+ years of relevant engineering experience.
• Experience with schematic entry and simulation tools such as FineSim or HSPICE.
• Proficiency in power delivery and power network analysis.

Responsibilities

• Design, simulate, and optimize DRAM memory arrays, data paths, ECC, command/control logic, and high‑speed interface circuits.
• Evaluate block‑level and full‑chip functionality and propose solutions for correctness.
• Analyze timing, area, power, and complexity trade‑offs in high‑speed DRAM and mixed‑signal designs.

Skills

CMOS circuit design

Schematic entry

Power delivery & networks

Python scripting

Tcl scripting

Perl scripting

Education

BSEE

MSEE

Tools

FineSim

HSPICE

Job description

Micron Technology in Richardson, Texas, seeks a Principal HBM Design Architect to design, simulate, optimize, and floorplan advanced DRAM circuits for next‑generation High Bandwidth Memory products. You will collaborate with global teams across digital, analog, and mixed‑signal domains to ensure performance and power efficiency.

The role involves pathfinding for new architectures, design reviews, and driving continuous improvement of design methodologies, with on‑site work in Richardson, TX.