RF GaN Technology Development Engineer

GlobalFoundries; Essex Junction (VT); On-site; USD 85,000 - 146,000; Full time

Job summary

GlobalFoundries in Vermont's FAB9 seeks highly motivated engineers to advance RF GaN technologies within a Technology Development team, developing new process flows and devices for our 200mm manufacturing platform.

You will embed with process, integration, and device engineers, collaborate with testing, reliability, manufacturing, and TCAD groups to meet performance, yield, and cost objectives from concept through installation. A BS degree with 2–4 years of related experience is expected.

Qualifications

• Requires a technical (University) degree in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science or related field from an accredited degree program. (Exceptions approved by local HR). BS + 2-4 years of experience or MS + 1-3 year of experience PhD + 0-1 year of experience
• Knowledge of GaN HEMT and modern semiconductor device physics and device characterization (DC, s-parameter, loadpull, pulsed I‑V).
• Experience in semiconductor processing with emphasis on wide band gap materials like the III‑N material system.
• Must have at least an overall 3.0 GPA and proven good academic standing.
• Language Fluency - English (Written & Verbal).

Responsibilities

• This position offers the unique opportunity to develop innovative RF GaN technologies as a Technology Development Process Integration and Device Engineer and deliver performance and reliability demonstration across technology development qualification milestones from conception through manufacturing installation
• Initial and primary responsibilities include development of integrated process flows and devices structures that meet performance, reliability, yield, and cost objectives for our customers.
• Collaborate with various engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.
• Support technology development qualification milestones from conception through manufacturing installation.
• Support planning, design, execution, and analysis of experiments, including constructional analysis, inline and test lab measurement summarization for performance, reliability, manufacturability capability, and defectivity assessments.

Skills

GaN HEMT knowledge

Semiconductor device physics

Process integration

English proficiency

Education

Bachelor's degree in Electrical Engineering or related field

Master's degree preferred

PhD a bonus

Job description

GlobalFoundries in Vermont's FAB9 seeks highly motivated engineers to advance RF GaN technologies within a Technology Development team, developing new process flows and devices for our 200mm manufacturing platform.

You will embed with process, integration, and device engineers, collaborate with testing, reliability, manufacturing, and TCAD groups to meet performance, yield, and cost objectives from concept through installation. A BS degree with 2–4 years of related experience is expected.