Principal Engineer, Technology Development

Socket.dev

Essex (VT)

On-site

USD 85,000 - 146,000

Full time

8 days ago
Application generator

A complete application in a minute — tailored resume and cover letter, ready to send.

Get past ATS filters

Benefits offered by this job

Mentorship program
Networking opportunities
Leadership development

Job summary

GlobalFoundries in Vermont is seeking new college graduates to join the Technology Development team. You will embed with process, integration and device engineers to advance RF GaN technologies and new market applications in our 200mm FAB9 facility.

Responsibilities include developing integrated process flows, collaborating across engineering functions, and driving qualification milestones from conception to manufacturing installation. English fluency and a strong academic record are required.

Qualifications

  • Technical university degree in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering or related field.
  • 3.0 GPA minimum and good academic standing.
  • Experience with GaN devices and wide bandgap materials is preferred.

Responsibilities

  • Develop integrated process flows and devices for RF GaN technologies.
  • Collaborate with testing, failure analysis, reliability, and manufacturing teams.
  • Plan and analyze experiments from conception to qualification.

Skills

GaN HEMT physics
Device characterization
English fluency
Statistics & DOE

Education

Electrical Engineering or related
Solid State Physics
Microelectronics
GPA 3.0+

Tools

TCAD simulation
MS Office & Data analysis

Job description

About GlobalFoundries

GlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power- efficient and high-performance solutions for high-growth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world. GF’s talented, global team remains focused every day on security, longevity and sustainability. For more information, visit www.gf.com.

New College Graduates Overview:

We offer many full‑time employment paths for recent graduates, which provide accelerated training in a fast‑paced work environment, cross‑functional working opportunities, and talent mobility. New college graduates are provided with mentorship, networking, and leadership opportunities, which give our new team members life‑long connections and skills.

Summary of Role:

We are seeking highly motivated employees with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9). New hires will immediately embed within our project teams of process, integration, and device engineers in developing new process flows and devices in RF GaN technologies, targeting new market applications.

Essential Responsibilities Include
  • This position offers the unique opportunity to develop innovative RF GaN technologies as a Technology Development Process Integration and Device Engineer and deliver performance and reliability demonstration across technology development qualification milestones from conception through manufacturing installation
  • Initial and primary responsibilities include development of integrated process flows and devices structures that meet performance, reliability, yield, and cost objectives for our customers.
  • Collaborate with various engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.
  • Support technology development qualification milestones from conception through manufacturing installation.
  • Support planning, design, execution, and analysis of experiments, including constructional analysis, inline and test lab measurement summarization for performance, reliability, manufacturability capability, and defectivity assessments.
Other Responsibilities
  • Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.
Required Qualifications
  • Requires a technical (University) degree in the field of Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science or related field from an accredited degree program. (Exceptions approved by local HR).
    BS + 2-4 years of experience or
    MS + 1-3 year of experience
    PhD + 0-1 year of experience
  • Knowledge of GaN HEMT and modern semiconductor device physics and device characterization (DC, s-parameter, loadpull, pulsed I-V).
  • Experience in semiconductor processing with emphasis on wide band gap materials like the III-N material system
  • Must have at least an overall 3.0 GPA and proven good academic standing.
  • Language Fluency - English (Written & Verbal)
  • Physical Capacity Demands – some amount of time required to work in a manufacturing clean room, with product handling.
  • Proficiency in MS Office and Statistical Analysis including Cpk, Design of Experiments
Preferred Qualifications
  • Master’s or PhD in Electrical Engineering, Materials Science, Solid State Physics or other relevant Electrical engineering, engineering or physical science discipline.
  • Prior related internship or co-op experience.
  • Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
  • Project management skills, i.e. the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.
  • Strong written and verbal communication skills
  • Strong planning & organizational skills
  • Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices.
  • Fundamental understanding of WBG device physics like dispersion, traps, self‑heating, buffer design
  • Experience in semiconductor processing in GaN-on-Silicon technologies.
  • Experience characterizing GaN-on-Si or Wide Bandgap devices
  • Excellent interpersonal skills, energetic,motivated,andself-driven
  • Demonstrateability to work well within a global matrixed team or environmentwith minimal supervision

#NCGProgramUS

Expected Salary Range

$85,000.00 - $146,000.00

The exact Salary will be determined based on qualifications, experience and location.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case‑by‑case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.

An offer with GlobalFoundries is conditioned upon the successful completion of pre‑employment conditions, as applicable, and subject to applicable laws and regulations.

GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory.

All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third‑party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law

Get your free, confidential resume review.
or drag and drop your file here.
Similar jobs

Similar jobs worth comparing

Principal Engineer, Technology Development
Principal Engineer, Technology Development

GLOBALFOUNDRIES U.S. 2 LLC • Essex Junction (VT)

On-site
USD 85,000 - 146,000
RF Technology Development Device Engineer (2027 New College Graduate)
RF Technology Development Device Engineer (2027 New College Graduate)

GlobalFoundries • Essex Junction (VT)

On-site
USD 85,000 - 146,000
Semiconductor Manufacturing Engineer (2027 New College Graduate)
Semiconductor Manufacturing Engineer (2027 New College Graduate)

GlobalFoundries • Essex Junction (VT)

On-site
USD 38,000 - 101,000
RF Technology Development Device Engineer (2027 New College Graduate)
RF Technology Development Device Engineer (2027 New College Graduate)

Socket.dev • Essex (VT)

On-site
USD 85,000 - 146,000
Principal Eng Device Engineering
Principal Eng Device Engineering

Socket.dev • Town of Malta (NY)

On-site
USD 85,000 - 146,000
Principal Eng Device Engineering
Principal Eng Device Engineering

GlobalFoundries • Town of Malta (NY)

On-site
USD 85,000 - 146,000
Technology Development Engineering Intern, Power GaN (Summer 2027)
Technology Development Engineering Intern, Power GaN (Summer 2027)

GlobalFoundries • Essex Junction (VT)

On-site
USD 28,000 - 55,000
Sr Process Integration Engineer (2027 New College Graduate)
Sr Process Integration Engineer (2027 New College Graduate)

GlobalFoundries • Essex Junction (VT)

On-site
USD 69,000 - 120,000
Sr Process Integration Engineer (2027 New College Graduate)
Sr Process Integration Engineer (2027 New College Graduate)

Socket.dev • Essex Junction (VT)

On-site
USD 69,000 - 120,000
Process Engineer, Metrology Engineering (2027 New College Graduate)
Process Engineer, Metrology Engineering (2027 New College Graduate)

GlobalFoundries • Essex Junction (VT)

On-site
USD 58,000 - 101,000