RF Technology Development Engineer – Drive Device Innovation

GlobalFoundries inc.

Essex (VT)

Presencial

USD 98 000 - 176 000

Tempo integral

14 dias+
Gerador de candidaturas

Transforma esta função numa entrevista — um currículo e uma carta de apresentação criados à volta do que este empregador procura.

Ultrapassa os filtros ATS

Resumo da oferta

GlobalFoundries in Essex Junction, VT is seeking an RF Technology Development Engineer to drive development, optimization, and qualification of FEOL/BEOL semiconductor devices. You will conduct DOE studies, partner with module engineers, and push for continuous process improvements, all while ensuring safety and environmental standards.

The role requires advanced degrees in Electrical or Materials Science and several years of semiconductor processing experience, with strong data analysis and

Qualificações

  • Master’s degree or PhD in Electrical, Materials Science, or a related engineering/physical science discipline.
  • BS + 6-7 years of experience or MS + 5-6 years or PhD + 3-4 years in semiconductor processing.
  • Experience with data analysis and layout/simulation tools (Cadence).

Responsabilidades

  • Develop, optimize, and qualify FEOL and BEOL semiconductor devices and processes.
  • Design, execute, and analyze DOE results to improve performance and yield.
  • Collaborate with process/module engineers, FA and characterization teams to improve device performance and yield.

Conhecimentos

Semiconductor processing
Data analysis
Cadence/EDA
English fluency
Problem solving
Team collaboration

Formação académica

Master’s degree or PhD in Electrical, Materials Science, or related field

Ferramentas

Cadence

Descrição da oferta de emprego

GlobalFoundries in Essex Junction, VT is seeking an RF Technology Development Engineer to drive development, optimization, and qualification of FEOL/BEOL semiconductor devices. You will conduct DOE studies, partner with module engineers, and push for continuous process improvements, all while ensuring safety and environmental standards.

The role requires advanced degrees in Electrical or Materials Science and several years of semiconductor processing experience, with strong data analysis and

Obtém a tua avaliação gratuita e confidencial do currículo.

ou arrasta e larga o ficheiro aqui.

Similar jobs

Ofertas semelhantes que vale a pena comparar

RF Technology Development Engineer (FEOL/BEOL)
RF Technology Development Engineer (FEOL/BEOL)

GlobalFoundries inc. • Essex Junction (VT)

Presencial
USD 98 000 - 176 000
RF Device & Process Innovation Engineer
RF Device & Process Innovation Engineer

GLOBALFOUNDRIES U.S. INC. • Essex Junction (VT)

Presencial
USD 118 000 - 210 000
RF Device Developer - Advanced Semiconductor Tech
RF Device Developer - Advanced Semiconductor Tech

GLOBALFOUNDRIES U.S. 2 LLC • Essex Junction (VT)

Presencial
USD 85 000 - 146 000
Senior RF Technology Development & Integration Engineer
Senior RF Technology Development & Integration Engineer

GLOBALFOUNDRIES U.S. INC. • Town of Malta (NY)

Presencial
USD 85 000 - 146 000
RF Technology Development Engineer — High-Freq Devices
RF Technology Development Engineer — High-Freq Devices

GlobalFoundries • Essex (VT)

Presencial
USD 118 000 - 210 000
Senior RF Technology Integration Engineer
Senior RF Technology Integration Engineer

GLOBALFOUNDRIES U.S. INC. • Town of Malta (NY)

Presencial
USD 118 000 - 210 000
RF Technology Development Engineer - SMTS
RF Technology Development Engineer - SMTS

GLOBALFOUNDRIES U.S. INC. • Essex Junction (VT)

Presencial
USD 118 000 - 210 000
RF Device Engineer - TCAD, SiGe & RF CMOS
RF Device Engineer - TCAD, SiGe & RF CMOS

GLOBALFOUNDRIES U.S. 2 LLC • Essex Junction (VT)

Presencial
USD 98 000 - 176 000
RF Technology Development Engineer - MTS
RF Technology Development Engineer - MTS

GlobalFoundries inc. • Essex Junction (VT)

Presencial
USD 98 000 - 176 000
RF Device Engineer - TCAD & High-Frequency Design
RF Device Engineer - TCAD & High-Frequency Design

GlobalFoundries • Essex (VT)

Presencial
USD 98 000 - 176 000