RF Device & Tech Development Engineer

Socket.dev; Essex (VT); On-site; USD 85,000 - 146,000; Full time

Job summary

GlobalFoundries is seeking new college graduates to join our RF Technology Development Organization as device and integration engineers in Essex Junction, VT. The role focuses on developing semiconductor technologies through TCAD simulations, design, and rigorous electrical characterization.

You will partner with cross-functional teams to optimize device performance, establish testing methodologies, and analyze data across DC and RF domains.

Qualifications

• Master’s or PhD in Electrical, Materials Science, or related field.
• CMOS or III–V or memory device physics research in semiconductor processing/characterization.
• Strong data analysis skills.
• Excellent interpersonal skills, both oral and written.
• GPA 3.0 minimum and good academic standing.
• English language fluency.

Responsibilities

• TCAD simulation, design, electrical characterization and analysis of SiGe HBT devices.
• Theoretical studies or simulations to optimize device performance and benchmark against state of the art.
• Collaborate with process integration team for device fabrication.
• Establish new technology design rules, test structures and methodologies.
• DC and RF characterization including high power measurements, S-parameters and load-pull.
• Own and drive technical process problem solving.
• Data analysis and customer interactions.

Skills

Data analysis

Communication

Team collaboration

Written & verbal English

Education

Master’s or PhD in Electrical Engineering

Master’s or PhD in Materials Science

Tools

Cadence

Job description

GlobalFoundries is seeking new college graduates to join our RF Technology Development Organization as device and integration engineers in Essex Junction, VT. The role focuses on developing semiconductor technologies through TCAD simulations, design, and rigorous electrical characterization.

You will partner with cross-functional teams to optimize device performance, establish testing methodologies, and analyze data across DC and RF domains.