Lead RF GaN Process & Device Engineer

Socket.dev; Essex (VT); On-site; USD 85,000 - 146,000; Full time

Benefits offered by this job

Mentorship program

Networking opportunities

Leadership development

Job summary

GlobalFoundries in Vermont is seeking new college graduates to join the Technology Development team. You will embed with process, integration and device engineers to advance RF GaN technologies and new market applications in our 200mm FAB9 facility.

Responsibilities include developing integrated process flows, collaborating across engineering functions, and driving qualification milestones from conception to manufacturing installation. English fluency and a strong academic record are required.

Qualifications

• Technical university degree in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering or related field.
• 3.0 GPA minimum and good academic standing.
• Experience with GaN devices and wide bandgap materials is preferred.

Responsibilities

• Develop integrated process flows and devices for RF GaN technologies.
• Collaborate with testing, failure analysis, reliability, and manufacturing teams.
• Plan and analyze experiments from conception to qualification.

Skills

GaN HEMT physics

Device characterization

English fluency

Statistics & DOE

Education

Electrical Engineering or related

Solid State Physics

Microelectronics

GPA 3.0+

Tools

TCAD simulation

MS Office & Data analysis

Job description

GlobalFoundries in Vermont is seeking new college graduates to join the Technology Development team. You will embed with process, integration and device engineers to advance RF GaN technologies and new market applications in our 200mm FAB9 facility.

Responsibilities include developing integrated process flows, collaborating across engineering functions, and driving qualification milestones from conception to manufacturing installation. English fluency and a strong academic record are required.