RF Device Engineer - TCAD & High-Frequency Design

GlobalFoundries; Essex (VT); On-site; USD 98,000 - 176,000; Full time

Job summary

GlobalFoundries is seeking an RF Technology Development Device Engineer in Essex Junction, VT. The successful candidate will conduct TCAD simulations and engage in device fabrication, design, and analysis for SiGe HBTs and RF CMOS devices. Required qualifications include a Master’s Degree or PhD in relevant fields and 3+ years of semiconductor analysis experience. The role offers a competitive salary ranging from $98,000 to $176,000, depending on qualifications and experience.

Qualifications

• 3+ years in semiconductor device analysis and TCAD.
• Experience with SiGe CMOS or SiGe BiCMOS device analysis.
• Fluency in English language.

Responsibilities

• Conduct TCAD simulations and electrical characterization.
• Work closely with process integration for device fabrication.
• Innovate methods for continuous improvement.

Skills

Silicon CMOS expertise

TCAD simulation

RF device design and characterization

Data analysis

Strong communication skills

Education

Master’s Degree or PhD in relevant discipline

Tools

Cadence

Job description

GlobalFoundries is seeking an RF Technology Development Device Engineer in Essex Junction, VT. The successful candidate will conduct TCAD simulations and engage in device fabrication, design, and analysis for SiGe HBTs and RF CMOS devices. Required qualifications include a Master’s Degree or PhD in relevant fields and 3+ years of semiconductor analysis experience. The role offers a competitive salary ranging from $98,000 to $176,000, depending on qualifications and experience.