RF Device Modeling Intern — SiGe HBT

GlobalFoundries inc.; Essex Junction (VT); On-site; USD 28,000 - 55,000; Full time

Benefits offered by this job

Mentorship program

Networking with executives

Professional development opportunities

Job summary

GlobalFoundries is offering an internship in device modelling to collaborate with an RF device modelling team. You will develop compact models (HiCUM L2 V3.0) for SiGe HBT devices, extract parameters, and validate against measurements.

Mentorship, growth opportunities, and network access with executives are provided. Ideal candidates are 2nd-year graduate students pursuing a Master’s or PhD in Electrical Engineering or Microelectronics, with a strong GPA and English proficiency.

Qualifications

• Second-year graduate student actively pursuing a Master’s or PhD in Electrical Engineering, Microelectronics or related field.
• Overall GPA 3.5 or higher and in good academic standing.
• Ability to work 20–40 hours per week during internship.

Responsibilities

• Analyze measurement data for DC and RF characteristics.
• Develop HiCUM L2 V3.0 based compact model for HBT devices.
• Extract compact model parameters for advanced device physics.
• Develop procedures to incorporate new physical effects in the compact model and propose new models.
• Present results to the technical team after project completion.

Skills

English proficiency

Data analysis

Python/ Matlab/ R

Project management

Education

Master’s or PhD in Electrical Engineering/Microelectronics

Tools

Cadence Spectre

Cadence Virtuoso

ADS

Job description

GlobalFoundries is offering an internship in device modelling to collaborate with an RF device modelling team. You will develop compact models (HiCUM L2 V3.0) for SiGe HBT devices, extract parameters, and validate against measurements.

Mentorship, growth opportunities, and network access with executives are provided. Ideal candidates are 2nd-year graduate students pursuing a Master’s or PhD in Electrical Engineering or Microelectronics, with a strong GPA and English proficiency.