RF Device Modelling Intern (SiGe HBT)

GlobalFoundries; Essex Junction (VT); On-site; USD 28,000 - 55,000; Full time

Benefits offered by this job

Mentorship

Professional development

Networking with executives

Job summary

GlobalFoundries in Vermont is offering an internship in RF device modelling within our RF modelling team. You will contribute to developing compact models for SiGe HBT devices, applying device physics, and using the HiCUM L2 V3.0 standard to create models for RF applications.

The role emphasizes hands-on data analysis, collaboration with the team, presenting results, and gaining mentorship. Candidates must be graduate students in EE or microelectronics, with strong academic standing and English

Qualifications

• Second-year graduate student pursuing a Master’s or PhD in Electrical Engineering, Microelectronics or related field.
• GPA of 3.5 or higher and good academic standing.
• English language proficiency required (written & verbal).
• Availability to work 20–40 hours per week during internship.

Responsibilities

• Analyze DC and RF measurement data for HBT devices.
• Develop HiCUM L2 V3.0 based compact model for HBT device.
• Extract compact model parameters for advanced device physics.
• Incorporate new physical effects into the compact model and propose improvements.
• Present results to the technical team after project completion.

Skills

English fluency

Communication skills

Project management

Data analysis

Programming (Python)

Education

Master’s or PhD in Electrical Engineering / Microelectronics

Tools

Cadence Spectre

Keysight ADS

Cadence Virtuoso

Python

MATLAB

Perl

Lisp

Job description

GlobalFoundries in Vermont is offering an internship in RF device modelling within our RF modelling team. You will contribute to developing compact models for SiGe HBT devices, applying device physics, and using the HiCUM L2 V3.0 standard to create models for RF applications.

The role emphasizes hands-on data analysis, collaboration with the team, presenting results, and gaining mentorship. Candidates must be graduate students in EE or microelectronics, with strong academic standing and English