RF GaN Technology Development Intern

GlobalFoundries; Essex Junction (VT); On-site; USD 28,000 - 55,000; Full time

Job summary

GlobalFoundries seeks highly motivated students to join its Technology Development team in Vermont (FAB9) for semiconductor process and device development, focusing on GaN HEMT technologies for RF applications. Interns will work within project teams, contributing to new process flows and device characterization.

You will gain mentorship, work on in-line measurements, and participate in experiments to advance world-class semiconductor technologies, with a pathway to a professional career after

Qualifications

• Pursuing a Masters or PhD in Electrical Engineering or Solid State Physics.
• Knowledge of semiconductor device physics and wide band gap materials.

Responsibilities

• Invent with device, test, and process integration teams to define modules and analysis tools.
• Focus on GaN HEMT development for RF applications.
• Collaborate with device, process integration, and program management teams to design experiments and meet performance goals.
• Coordinate with Fab9 engineering teams to ensure tool availability and process controls for new devices.
• Support device simulation and final characterization analysis to achieve best-in-class performance.

Skills

GaN HEMT

Device characterization

RF testing

Team collaboration

Education

Masters or PhD in Electrical Engineering or Solid State Physics

Job description

GlobalFoundries seeks highly motivated students to join its Technology Development team in Vermont (FAB9) for semiconductor process and device development, focusing on GaN HEMT technologies for RF applications. Interns will work within project teams, contributing to new process flows and device characterization.

You will gain mentorship, work on in-line measurements, and participate in experiments to advance world-class semiconductor technologies, with a pathway to a professional career after